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Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films
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This paper reports that ion implantation to a dose of 1×1017
ions/cm2 was performed on c-axis-orientated ZnO thin films deposited on
(0001) sapphire substrates by the sol-gel technique. After ion implantation,
the as-implanted ZnO films were annealed in argon ambient at different
temperatures from 600-900℃. The effects of ion implantation
and post-implantation annealing on the structural and optical properties of
the ZnO films were investigated by x-ray diffraction (XRD),
photoluminescence (PL). It was found that the intensities of (002) peak and
near band edge (NBE) exitonic ultraviolet emission increased with increasing
annealing temperature from 600-900℃. The defect related deep
level emission (DLE) firstly increased with increasing annealing temperature
from 600- 750℃, and then decreased quickly with increasing
annealing temperature. The recovery of the intensities of NBE and DLE occurs
at \sim 850℃ and \sim 750℃ respectively. The relative
PL intensity ratio of NBE to DLE showed that the quality of ZnO films
increased continuously with increasing annealing temperature from 600 -
900℃. 相似文献
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