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INVESTIGATION OF GROWTH CHARACTERISTICS OF MONOCRYSTALLINE C60 FILMS IN HELIUM GAS ENVIRONMENT
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The growth characteristics of C60 films were investigated in helium gas environment at pressures of 0, 2.667×10-2 and 6.667×10-2 Pa, respectively. X-ray diffraction results showed that perfectly (111) oriented monocrystalline C60 films with large grains were successfully deposited on synthetic 1M phlogopite mica-fluorophlogopite (0Ol) plane at a substrate temperature of 160℃ when the helium gas pressure is 2.667×10-2 Pa. The results indicated that under appropriate helium gas pressure, the energy change of C60 molecules through collisions with helium atoms, and the decrease of the supersaturation of the vapor pressure in the vicinity of the substrate resulted in a quasi-thermodynamic equilibrium deposition system. As a result, well-structured monocrystalline C60 films were deposited on (001) plane of the fluorophlogopite substrate. 相似文献
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INVESTIGATION OF GROWTH CHARACTERISTICS OF MONOCRYSTALLINE C60 FILMS IN HELIUM GAS ENVIRONMENT
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The growth characteristics of C60 films were investigated in helium gas environment at pressures of 0, 2.667×10-2 and 6.667×10-2 Pa, respectively. X-ray diffraction results showed that perfectly (111) oriented monocrystalline C60 films with large grains were successfully deposited on synthetic 1M phlogopite mica-fluorophlogopite (0Ol) plane at a substrate temperature of 160℃ when the helium gas pressure is 2.667×10-2 Pa. The results indicated that under appropriate helium gas pressure, the energy change of C60 molecules through collisions with helium atoms, and the decrease of the supersaturation of the vapor pressure in the vicinity of the substrate resulted in a quasi-thermodynamic equilibrium deposition system. As a result, well-structured monocrystalline C60 films were deposited on (001) plane of the fluorophlogopite substrate. 相似文献
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In掺杂ZnO薄膜的制备及其特性研究 总被引:15,自引:2,他引:13
采用射频反应溅射技术在硅(100)衬底上制备了未掺杂和掺In的ZnO薄膜。掠角X射线衍射测试表明,实验中制备的掺In样品为ZnO薄膜。用X射线衍射仪、原子力显微镜和荧光分光光度计分别对两样品的结构、表面形貌和光致发光特性进行了表征,分析了In掺杂对ZnO薄膜的结构和发光特性的影响。与未掺杂ZnO薄膜相比,掺In ZnO薄膜具有高度的C轴择优取向,同时样品的晶格失配较小,与标准ZnO粉末样品之间的晶格失配仅为0.16%;掺In ZnO薄膜表面平滑,表面最大不平整度为7nm。在掺In样品的光致发光谱中观察到了波长位于415nm和433nm处强的蓝紫光双峰,对掺In样品的蓝紫双峰的发光机理进行了讨论,并推测出该蓝紫双峰来源于In替位杂质和Zn填隙杂质缺陷。 相似文献
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以金属锌(Zn)和金属铟(In)为靶材采用射频反应共溅射技术在硅(100)衬底上沉积了In掺杂ZnO薄膜。用X射线衍射仪、扫描电子显微镜(SEM)、热探针、四探针和荧光分光光度计分别对样品的结构、表面形貌、导电类型、电阻率和发光特性进行了分析表征。测试结果表明,实验中制备出的ZnO薄膜具有高度的c轴择优取向和小压应力(0.74GPa),薄膜表面平整。样品为n型导电,电阻率为1.6Ω·cm。在室温光致发光谱测量中,首次观察到位于415~433nm的强的蓝紫光双峰发射,发光双峰的半峰全宽约为400meV。讨论了In掺杂对薄膜发光特性的影响。 相似文献
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采用传输线模型测量了重B掺杂p型金刚石薄膜(约1020cm-3)上Ti/A u欧姆接触电阻率ρc,测试了500℃退火前后及大电流情况下的I-V特性,研究 了退火对ρc的影响.结果表明,重掺杂和退火工艺是改善欧姆接触的有效手段. ρc随测试温度的变化表明金属/半导体接触界面载流子输运机制为隧道穿透.而 光照对ρc影响的分析表明金刚石可作为理想窗口材料.测试得到的最低ρ c值约为10-4Ωcm2.
关键词:
金刚石薄膜
欧姆接触
接触电阻率 相似文献
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用等离子体增强化学气相淀积(PECVD)生长了200nm的SiGe薄膜,然后将C离子注入SiGe层,经两步热退火处理制备了Si1-x-yGexCy三元合金半导体薄膜.应用卢瑟福背散射(RBS),傅里叶变换红外光谱(FTIR)和高分辨率x射线衍射(HRXRD)研究了薄膜的结构和外延特性.发现C原子基本处于替代位置,C原子的掺入缓解了SiGe层的压应变
关键词:
Si1-x-yGexCy薄膜
离子注入
固相外延 相似文献
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Tb-doped Zinc oxide (ZnO:Tb) films were prepared by RF reactive magnetron sputtering of a Zn target with some Tb-chips attached. The results show that the appropriate Tb ions incorporated into ZnO films can improve the structural and electrical properties of ZnO films. Photoluminescence (PL) measurements show that the characteristic emission lines correspond to the intra-4f^n-shell transitions in Tb^{3+} ions at room temperature. Under the optimal conditions, the ZnO:Tb films were prepared with the lowest resistivity (ρ) of 9.34×10^{ -4}Ωcm, transmittance over 80% at the visible region and the strong blue emission. 相似文献
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蓝光ZnO薄膜的特性研究 总被引:2,自引:0,他引:2
采用反应溅射法在n型硅(100)衬底上制备了ZnO薄膜,分别用X射线衍射仪、原子力显微镜和荧光分光光度计对样品的结构、表面形貌和光致发光特性进行了表征。X射线衍射结果表明,实验中制备出了应变小的c轴择优取向的ZnO薄膜;原子力显微镜观察表明,薄膜表面平整,颗粒大小约为50nm,为柱状结构,颗粒垂直于硅衬底表面生长;在室温光致发光(PL)谱中观察到了波长位于434nm处的较窄的强蓝光发射峰,该蓝光峰的半峰全宽约为50meV。对蓝光峰的发光机制进行了讨论,并推断出该蓝光峰来源于电子从Zn填隙缺陷能级向价带顶跃迁。 相似文献
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