2008年国际纯粹与应用物理联合会(IUPAP)第三届女物理工作者国际会议介绍

1 会议总体情况 鉴于物理对社会发展的重要性,由国际纯粹与应用物理联合会(International Union of Pure and Applied Physics,IUPAP)于2002年发起并赞助召开系列国际女物理工作者研讨会(International Conference on Women in Physics,ICWIP);     

ELECTRONIC AND OPTICAL PROPERTIES OF STRAINED WURTZITE GaN

Band structures of wurtzite GaN (α-GaN) under strains in the region -5%—5% are calculated in a tight-binding framework. The empirical scaling rule has been used for considering the effects of hydroatatic strains. The scaling indexes are determined by fitting the deformation-potential constants with other theoretical values. The band gap at Γ point increases with the absolute value of strains. GaN turns to be of indirect band gap when strains reach 5 %. The density of states and the imaginary part of dialectic function (ε₂(ω)) are studied. Both the shape and energy position of the highest peak in the ε₂(ω) spectrum successively change with the strains. The real part of dielectric/unction, refractive index and the effects of the strains on them are also shown.     

ELECTRONIC AND OPTICAL PROPERTIES OF WURTZITE GaN:——A THEORETICAL APPROACH

The band structures of wurtzite GaN(α-GaN) are studied using the nearest and second-nearest neighbour semi-empirical tight-hinding method in sp³ s^* model. The calculated direct fundamental gap of α-GaN is 3.45 eV, which is in good agreement with the experimental data. The density of states and the imaginary pert of dielectric function (ε₂ (ω)) are evaluated to he in the regions - 10.0 - 12 eV and (1.0 - 10.0 eV, respectively. There are mainly three peaks at 6,4, 7,5, 8.4 eV, dominating the ε₂(ω) spectrum. The two components of the ε₂(ω) (i. e. ε_2xy(ω) and ε_2z(ω) ) are also calculated; and the real prat of dielectric function, reflectivity, absorption coefficient, and refractive index are all studied.     

LSDA+U方法对富勒烯内掺稀土原子的结构和电子结构的理论研究

在密度泛函理论框架下的局域密度近似方法 (LDA)能够准确地给出广延态电子体系的基态电子结构 ,是研究复杂体系的电子结构的一种非常成功的方法。由于这种方法不含参数 ,被广泛地用于微观体系的研究。但是 ,在处理的体系中含有局域电子时 ,由于方法的局限 ,给出的结果与光电子谱等试验结果符合得并不好。LSDA U方法是在局域自旋密度近似的框架下 ,结合模型哈密顿方法 ,对局域电子采用哈伯德模型描述 ,用以改进局域密度近似计算的一种方法。本文利用局域密度近似下的离散变分团簇方法 (DVM )对于内嵌稀土原子的富勒烯Er2 @C82 、Tm @C82 的电子结构进行了第一性原理的计算。对于体系中所含的稀土原子存在强关联的 4f电子 ,在LDA方法计算的基础上 ,考虑 4f电子在位库仑作用 ,用LSDA U方法研究了上述体系 ,得到了可以和XPS和吸收谱相比较的结果。     

Electronic structures and topological properties of TeSe2 monolayers

The successfully experimental fabrication of two-dimensional Te monolayer films [Phys. Rev. Lett. 119 106101 (2017)] has promoted the researches on the group-VI monolayer materials. In this work, the electronic structures and topological properties of a group-VI binary compound of TeSe₂ monolayers are studied based on the density functional theory and Wannier function method. Three types of structures, namely, α-TeSe₂, β-TeSe₂, and γ-TeSe₂, are proposed for the TeSe₂ monolayer among which the α-TeSe₂ is found being the most stable. All the three structures are semiconductors with indirect band gaps. Very interestingly, the γ-TeSe₂ monolayer becomes a quantum spin Hall (QSH) insulator with a global nontrivial energy gap of 0.14 eV when a 3.5% compressive strain is applied. The opening of the global band gap is understood by the competition between the decrease of the local band dispersion and the weakening of the interactions between the Se p_x, p_y orbitals and Te p_x, p_y orbitals during the process. Our work realizes topological states in the group-VI monolayers and promotes the potential applications of the materials in spintronics and quantum computations.     

Unexpected low thermal conductivity and large power factor in Dirac semimetal Cd_3As_2

Thermoelectrics has long been considered as a promising way of power generation for the next decades. So far,extensive efforts have been devoted to the search of ideal thermoelectric materials, which require both high electrical conductivity and low thermal conductivity. Recently, the emerging Dirac semimetal Cd3As2, a three-dimensional analogue of graphene, has been reported to host ultra-high mobility and good electrical conductivity as metals. Here, we report the observation of unexpected low thermal conductivity in Cd3As2, one order of magnitude lower than the conventional metals or semimetals with a similar electrical conductivity, despite the semimetal band structure and high electron mobility. The power factor also reaches a large value of 1.58 m W·m-1·K-2at room temperature and remains non-saturated up to 400 K.Corroborating with the first-principles calculations, we find that the thermoelectric performance can be well-modulated by the carrier concentration in a wide range. This work demonstrates the Dirac semimetal Cd3As2 as a potential candidate of thermoelectric materials.     

A DISCRETE VARIATIONAL METHOD STUDY ON THE ELECTRONIC STRUCTURES OF CaMnO3 AND LaMnO3

The electronic structures of the perovskite oxides, LaMnO₃ and CaMnO₃, with various magnetic structures are studied using the first-principles discrete variational (DV) cluster method based on ab initio local-spin-density approximation (LSDA). The ground states of different magnetic phases (including ferromagnetic (FM), A-type antiferromagnetic (A-AFM), and G-type antiferromagnetic (G-AFM)) have been described in this work. The cubic CaMnO₃ with observed G-AFM magnetic order is found to have a 0.1 eV calculated gap. Both FM CaMnO₃ and LaMnO₃ have "half-metallic" character, which is in agreement with other works. LaMnO₃ with both A-type and G-type antiferromagnetic order have metallic band structures. Part of Jahn-Teller (JT) distortion (Q₂ type) has been taken into consideration for A-AFM LaMnO₃. Under Q₂ type JT distortion, the occupied and unoccupied states of O 2p and Mn 3d states move farther away from the Fermi energy. It is also found that the distortion can further stabilize the structure. The density of states and the binding energy of the distorted A-AFM LaMnO₃ are given in this paper.     

A DISCRETE VARIATIONAL METHOD STUDY ON THE ELECTRONIC STRUCTURES OF CaMnO3 AND LaMnO3

The electronic structures of the perovskite oxides, LaMnO₃ and CaMnO₃, with various magnetic structures are studied using the first-principles discrete variational (DV) cluster method based on ab initio local-spin-density approximation (LSDA). The ground states of different magnetic phases (including ferromagnetic (FM), A-type antiferromagnetic (A-AFM), and G-type antiferromagnetic (G-AFM)) have been described in this work. The cubic CaMnO₃ with observed G-AFM magnetic order is found to have a 0.1 eV calculated gap. Both FM CaMnO₃ and LaMnO₃ have "half-metallic" character, which is in agreement with other works. LaMnO₃ with both A-type and G-type antiferromagnetic order have metallic band structures. Part of Jahn-Teller (JT) distortion (Q₂ type) has been taken into consideration for A-AFM LaMnO₃. Under Q₂ type JT distortion, the occupied and unoccupied states of O 2p and Mn 3d states move farther away from the Fermi energy. It is also found that the distortion can further stabilize the structure. The density of states and the binding energy of the distorted A-AFM LaMnO₃ are given in this paper.     

Quantum anomalous Hall effect in real materials

Under a strong magnetic field,the quantum Hall(QH) effect can be observed in two-dimensional electronic gas systems.If the quantized Hall conductivity is acquired in a system without the need of an external magnetic field,then it will give rise to a new quantum state,the quantum anomalous Hall(QAH) state.The QAH state is a novel quantum state that is insulating in the bulk but exhibits unique conducting edge states topologically protected from backscattering and holds great potential for applications in low-power-consumption electronics.The realization of the QAH effect in real materials is of great significance.In this paper,we systematically review the theoretical proposals that have been brought forward to realize the QAH effect in various real material systems or structures,including magnetically doped topological insulators,graphene-based systems,silicene-based systems,two-dimensional organometallic frameworks,quantum wells,and functionalized Sb(111) monolayers,etc.Our paper can help our readers to quickly grasp the recent developments in this field.