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Ferroelectric behaviour of 30nm BaTiO3 ceramics prepared by high pressure assisted sintering 下载免费PDF全文
Dense nanocrystalline BaTiO3 ceramics with a homogeneous grain size of 30 nm was obtained by pressure assisted sintering. The ferroelectric behaviour of the ceramics was characterized by the dielectric peak at around 120 ℃, the P-E hysteresis loop and some ferroelectric domains. These experimental results indicate that the critical grain size for the disappearance of ferroelectricity in nanocrystalline BaTiO3 ceramics fabricated by pressure assisted sintering is below 30 nm. The ferroelectric property decreasing with decreasing grain size can be explained by the lowered tetragonality and the 'dilution' effect of grain boundaries. 相似文献
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钛酸钡基半导化陶瓷中的PTCR效应通常与材料中的施受主掺杂切相关,蒸汽掺杂能够大幅度影响材料的PTCR效应。CdO在高温下具有较高的蒸汽压,是一种适用的蒸汽掺杂剂,研究了CdO以及CdO蒸汽对掺Y^3+的Ba1-xSrxTiO3陶瓷的PTCR效应的影响,结果首次发现了Cd^2+掺杂样品的PTCR效应都有不同程度的提高,采用蒸汽掺杂时,效果更为显著。现有的理论很难解释Cd^2+掺杂能够提高钛酸钡基材料PTCR效应。我们从缺陷化学的角度,分析了Cd^2+在BaTiO3基材料中的行为,推断表明这种现象可能是由于铁电相变时,处于晶界区的Cd^2+在Ba位和Ti位之间转换造成的。 相似文献
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The effects of the Pt diffusion barrier layer on the interface diffusion and reaction, crystallization, dielectric and ferroelectric properties of the PZT/Si(111) sample have been studied using XPS, AES and XRD techniques. Hie results indicate that the Pt diffusion barrier layer between the PZT layer and the Si substrate prohibits the formation of TiCx TiSix and SiO2 species in the PZT layer. The Pt barrier layer also completely interrupts the diffusion of Si from the Si substrate into the PZT layer and impedes the diffusion of oxygen from air to the Si substrate greatly. Although the Pt layer can not prevent completely the diffusion and reaction between oxygen and silicon, it can prevent the formation of a stable SiO2 interface layer on the interface of PZT/Si. The Pt layer reacts with silicon to form PtSix species on the interface of Pt/Si, which can intensify the chemical binding strength between the Pt layer and the Si substrate. To play a good role as a diffusion barrier layer, the Pt barrier layer 相似文献
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Effect of Annealing on Ferroelectric Properties of Nanometre BaTiO3 Ceramics Prepared by High Pressure Sintering Method 下载免费PDF全文
Dense nanocrystalline BaTiO3 ceramics with a grain size of 5Onto are prepared under 6 GPa at 1273K using a high pressure sintering method. The sintered bulk is uniform and the relative density is above 97%. We anneal the ceramic samples in oxygen with various temperatures and for the annealing, several broadened peaks can be observed at different times without apparent grain growth. After about 378K( by dielectric measurements. However, these peaks are very different from those of coarser-grained ceramics. It is indicated that both the elimination of oxygen vacancies and the release of residual stresses caused by high pressure greatly improve the overall ferroelectric properties of BaTiO3 ceramics. The observation of nearly linear polarization hysteresis loop after anneal provides the solid evidence of ferroelectricity in these nano-sized BaTiO3 ceramics. It is believed that the absence of 90° domains and the existence of poor-permittivity nonferroelectric grain boundaries contribute to the slim loop. 相似文献
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用正电子寿命测量方法研究了锆钛酸铅(简称PZT)压电陶瓷的电场极化效应。发现正电子平均寿命τm随极化场强E的提高而增大。讨论了τm增大的微观机制,这可能主要归因于内电场增大在能量上有利于正电子形成qPs态。同时进行了介电常数、机电耦合系数、压电常数等的测量,并与正电子寿命测量的结果作了对比,认为将正电子作为测量电畴转向程度及电子能量状态变化的一种手段是可能的。正电子寿命测量采用了特殊的单样品法,并就与此有关的数据处理和分析方法进行了若干讨论。
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