负电阻的串联及并联方式研究

本文通过改变负电阻连接方式以及接地端的位置,对负电阻的串联与并联方式进行仿真研究,得到了多个基于运算放大器构建的负电阻的串联与并联方式,使负电阻的串联与并联不局限于两个负电阻。该方式可使多个负电阻在串联与并联时表现出与正电阻一样的特性。该研究结果明确了负电阻的串联与并联方式,在电路实验教学和工程实践中具有一定的意义。     

Self-compliance multilevel storage characteristic in HfO_2-based device

In this paper, the self-compliance bipolar resistive switching characteristic of an HfO_2-based memory device with Ag/HfO_2/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s,which may be useful for the applications in nonvolatile multilevel storage.     

文科物理课程中课程思政的教学探索与研究

本文结合物理课程特点和国情价值观,提炼出了物理课程思政教育的基本要素框架.同时,我们以《文科物理》为实践课程,根据要素框架设计了课程思政案例,并以趣味漫画为案例载体引入课堂教学,通过实验班和对照班的对比开展教学实验及研究.结果表明:在物理课堂教学中引入课程思政案例,不仅能有效提高学生的思想道德认知,也能提高学生的课堂注...     

TiO_x-based self-rectifying memory device for crossbar WORM memory array applications

Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiO_x/W structure with self-rectifying property is demonstrated for write-once-read-many-times(WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state(LRS) permanently with a rectification ratio as high as 10⁴ at ±1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiO_x/W interface and the Schottky contact at Pt/TiO_x interface. The results in this paper demonstrate the potential application of TiO_x-based WORM memory device in crossbar arrays.     

Investigation of resistive switching behaviours in WO3-based RRAM devices

In this paper, a WO₃-based resistive random access memory device composed of a thin film of WO₃ sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO₃/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.