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采用常规等离子体增强化学气相沉积工艺,以高H2稀释的SiH4作为反应气体源和PH3作为磷原子的掺杂剂,在p型(100)单晶硅((p)c-Si)衬底上, 成功地生长了施主掺杂型纳米硅膜((n)nc-Si:H),进而制备了(n)nc-Si:H/(p)c-Si异质结,并在230—420K温度范围内实验研究了该异质结的I-V特性.结果表明,(n)nc-Si:H/(p)c- Si异质结为一典型的突变异质结构,具有良好的温度稳定性和整流特性.正向偏压下
关键词:
(n)nc-Si:H/(p)c-Si异质结
能带模型
电流输运机构
温度特性 相似文献
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Photon—Storage in Optical Memory Cells Based on a Semiconductor Quantum Dot—Quantum Well Hybrid Structure
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We report a new type of photonic memory cell based on a semiconductor quantum dot (QD)--quantum well (QW) hybrid structure, in which photo-generated excitons can be decomposed into separated electrons and holes, and stored in QW and QDs respectively. Storage and retrieval of photonic signals are verified by time-resolved photoluminescence experiments. A storage time in excess of l00ms has been obtained at a temperature of 10K while the switching speed reaches the order of ten megahertz. 相似文献
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本文讨论一类带有齐次Neumann边界条件的修正的Leslie-Gower捕食者-食饵扩散模型.首先用Lyapunov方法得到正平衡点全局渐近稳定的一个充分条件,然后用迭代方法将所得条件进行改进. 相似文献
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