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We report the simulation results on the thickness uniformity of optical coatings deposited on spherical substrates by optimizing the geometric configuration parameters, such as tilting angle of the substrate holder and position of the evaporation source in a 1 000-mm-diameter planetary rotation stage (PRS). We reveal that good film uniformity on convex spherical surfaces or flat substrates, as well as concave surfaces with weak to moderate curvatures can be obtained through appropriate tilting of the substrate holder. For 300-mm-diameter substrates with clear aperture to radius of curvature (CA/RoC) between 0.3 and 0.7, the achievable film uniformity is above 99%. The source position is optimized to achieve good film uniformity. 相似文献
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本文从理论上分析了脉冲光热谱中波长效应。讨论了波长调谐对脉冲光热光谱信号的峰值和时间特性的影响。 相似文献
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SiC以优异的物理性能和良好的工艺性能,逐渐成为大型空间成像光学系统主镜的首选轻量化光学材料. SiC镜坯制备及加工过程中引入的亚表面缺陷会严重影响最终的镜面质量以及光学系统的成像品质.针对SiC材料亚表面缺陷的检测问题,本文采用光热辐射技术进行分析:分别建立均匀样品的单层理论模型和含空气层缺陷的三层理论模型,用于计算无缺陷和存在缺陷区域的光热辐射信号.通过对三层理论模型信号的相位仿真分析,提出利用相位差-频率曲线的特征频率估算缺陷深度的经验公式;利用光热辐射装置测量存在亚表面缺陷的SiC样品,分析缺陷区域的光热辐射信号分布,利用经验公式计算缺陷深度,并与缺陷实际深度分布进行对比分析.实验与计算结果显示,光热辐射技术能有效探测SiC镜坯的亚表面缺陷及其形貌,并且对于界面与样品相对平行且较为平缓的亚表面缺陷,其缺陷深度可通过经验公式准确确定. 相似文献
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方波调制时的光热光束偏转理论 总被引:2,自引:0,他引:2
本文叙述了加热光束光强以方波调制时的光热光束偏转理论,讨论了偏转信号值与加热光功率、光斑半径,两光点的相对位置及调制频率等的关系并与实验结果比较,其结果是定性一致的. 相似文献
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An approach for determining the optical constants of the weakly absorbing substrate is developed and applied to obtain the parameters of CaF2 and fused silica substrates in deep ultraviolet (DUV) and vacuum ultraviolet (VUV) range. A method for extracting the optical constants of thin films deposited on strongly absorbing substrate, which is based on the reflectance spectra measured at different angles of incidence, is also presented. The optical constants are determined by fitting the measured spectra to the theoretical models. The proposed method is applied to determine the refractive index and extinction coefficient (n, k) of MgF2 film deposited on silicon substrate by electron beam evaporation with substrate temperature 300 ℃ and deposition rate 0.2 nm/s. The determined n, k values at 193 nm are 1.433 and 9.1×10-4, respectively. 相似文献
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推导出用于测量半导体载流子输运特性(载流子寿命、载流子扩散系数和前表面复合速度)的调制自由载流子吸收(modulated free carrier absorption, MFCA)检测技术的三维理论模型,给出了调制自由载流子吸收检测信号与调制频率和抽运-探测光相对距离的关系.定性分析了在不同调制频率时各个载流子输运参数对径向位置扫描曲线(信号与两束光相对距离的关系)的影响,结果表明调制自由载流子吸收检测信号对各个参数的灵敏度随抽运-探测光相对距离的增加而增加.仿真和实验结果表明,通过拟合不同调制频率时调
关键词:
调制自由载流子吸收
载流子输运特性
径向位置扫描 相似文献