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This paper investigates a simplified metal induced crystallization
(MIC) of a-Si, named solution-based MIC (S-MIC). The nickel inducing
source was formed on a-Si from salt solution dissolved in de-ionized
water or ethanol. a-Si thin film was deposited with low pressure
chemical vapour deposition or plasma enhanced chemical vapour
deposition as precursor material for MIC. It finds that the content
of nickel source formed on a-Si can be controlled by solution
concentration and dipping time. The dependence of crystallization
rate of a-Si on annealing time illustrated that the linear density
of nickel source was another critical factor that affects the
crystallization of a-Si, besides the diffusion of nickel disilicide.
The highest electron Hall mobility of thus prepared S-MIC poly-Si is
45.6cm2/(V.s). By using this S-MIC poly-Si, thin
film transistors and display scan drivers were made, and their
characteristics are presented. 相似文献
2.
用无电电镀的化学方法,在VHF-PECVD沉积获得的非晶硅薄膜表面形成镍诱导源,在550℃下退火若干小时,可以诱导产生微米量级的多晶硅晶粒.用此法形成的镍源可以均匀地分布在非晶硅薄膜的表面.非晶硅薄膜上形成晶核的数量取决于镍溶液的浓度、pH值和无电电镀的时间等参量.当成核密度比较低时可以观察到径向晶化现象.用VHF-PECVD非晶硅薄膜作为晶化前驱物,晶化后多晶硅的最大晶粒尺寸可达到90μm.用此多晶硅试制的TFT,获得了良好的器件特性.
关键词:
金属诱导晶化
化学源
多晶硅
薄膜晶体管 相似文献
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