全文获取类型
收费全文 | 285篇 |
免费 | 35篇 |
国内免费 | 77篇 |
专业分类
化学 | 108篇 |
晶体学 | 1篇 |
力学 | 20篇 |
综合类 | 5篇 |
数学 | 31篇 |
物理学 | 232篇 |
出版年
2024年 | 2篇 |
2023年 | 9篇 |
2022年 | 10篇 |
2021年 | 7篇 |
2020年 | 1篇 |
2019年 | 7篇 |
2018年 | 15篇 |
2017年 | 4篇 |
2016年 | 1篇 |
2015年 | 5篇 |
2014年 | 18篇 |
2013年 | 3篇 |
2012年 | 15篇 |
2011年 | 12篇 |
2010年 | 6篇 |
2009年 | 20篇 |
2008年 | 22篇 |
2007年 | 15篇 |
2006年 | 18篇 |
2005年 | 18篇 |
2004年 | 21篇 |
2003年 | 14篇 |
2002年 | 7篇 |
2001年 | 11篇 |
2000年 | 8篇 |
1999年 | 14篇 |
1998年 | 6篇 |
1997年 | 13篇 |
1996年 | 15篇 |
1995年 | 8篇 |
1994年 | 6篇 |
1993年 | 7篇 |
1992年 | 11篇 |
1991年 | 11篇 |
1990年 | 7篇 |
1989年 | 1篇 |
1988年 | 3篇 |
1987年 | 3篇 |
1986年 | 2篇 |
1985年 | 8篇 |
1984年 | 2篇 |
1983年 | 6篇 |
1982年 | 1篇 |
1981年 | 3篇 |
1958年 | 1篇 |
排序方式: 共有397条查询结果,搜索用时 15 毫秒
2.
3.
4.
Total Dose Radiation Tolerance of Phase Change Memory Cell with GeSbTe Alloy 总被引:1,自引:0,他引:1
下载免费PDF全文
![点击此处可从《中国物理快报》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Phase change memory (PCM) cell array is fabricated by a standard complementary metal-oxide-semiconductor process and the subsequent special fabrication technique. A chalcogenide Ge2Sb2Te5 film in thickness 50hm deposited by rf magnetron sputtering is used as storage medium for the PCM cell. Large snap-back effect is observed in current-voltage characteristics, indicating the phase transition from an amorphous state (higher resistance state) to the crystalline state (lower resistance state). The resistance of amorphous state is two orders of magnitude larger than that of the crystalline state from the resistance measurement, and the threshold current needed for phase transition of our fabricated PCM cell array is very low (only several μA). An x-ray total dose radiation test is carried out on the PCM cell array and the results show that this kind of PCM cell has excellent total dose radiation tolerance with total dose up to 2 ×10^6 rad(Si), which makes it attractive for space-based applications. 相似文献
5.
6.
7.
We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a vertically applied electric field. This field is found to increase the splitting between the symmetric and antisymmetric levels for the same angular momentum. The field along the direction from one disc to another affects the electronic energy levels similarly as that in the opposite direction because the two discs are identical. It is obvious from our calculation that the probability of finding an electron in one disc becomes larger when the field points from this disc to the other one. 相似文献
8.
We study the oscillator strengths of the optical transitions of the vertically stacked self-assembled InAs quantum discs.The oscillator strengths change evidently when the two quantum discs are far apart from each other.A vertically applied electric field affects the oscillator strengths severely.while the oscillator strengths change slowly as the radius of one disc increases.We also studied the excitonic energy of the system.including the Coulomb interaction.The excitonic energy increases with the increasing radius of one disc.but decreases as a vertically applied electric field increases. 相似文献
9.
10.