The 2D InSe/WS_2 Heterostructure with Enhanced Optoelectronic Performance in the Visible Region

Two-dimensional(2D)InSe and WS_2 exhibit promising characteristics for optoelectronic applications.However,they both have poor absorption of visible light due to wide bandgaps:2D InSe has high electron mobility but low hole mobility,while 2D WS_2 is on the contrary.We propose a 2D heterostructure composed of their monolayers as a solution to both problems.Our first-principles calculations show that the heterostructure has a type-Ⅱband alignment as expected.Consequently,the bandgap of the heterostructure is reduced to 2.19 eV,which is much smaller than those of the monolayers.The reduction in bandgap leads to a considerable enhancement of the visible-light absorption,such as about fivefold(threefold)increase in comparison to monolayer InSe(WS_2)at the wavelength of 490 nm.Meanwhile,the type-Ⅱ band alignment also facilitates the spatial separation of photogenerated electron-hole pairs;i.e.,electrons(holes)reside preferably in the InSe(WS_2)layer.As a result,the two layers complement each other in carrier mobilities of the heterostructure:the photogenerated electrons and holes inherit the large mobilities from the InSe and WS_2 monolayers,respectively.