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利用分子束外延系统在Si (001) 衬底上制备了单晶Tm2O3薄膜, 利用X射线光电子能谱研究了Tm2O3相对于Si的能带偏移. 得出Tm2O3相对于Si的价带和导带偏移分别为3.1 eV± 0.2 eV和1.9 eV± 0.3 eV, 并得出了Tm2O3的禁带宽度为6.1 eV± 0.2 eV. 研究结果表明Tm2O3是一种很有前途的高k栅介质候选材料.
关键词:
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X射线光电子能谱
能带偏移 相似文献
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This paper reports that stoichiometric, amorphous, and uniform Er2O3 films are deposited on Si(001) substrates by a radio frequency magnetron sputtering technique. Ellipsometry measurements show that the refractive index of the Er2O3 films is very close to that of a single layer antireflection coating for a solar cell with an air surrounding medium during its working wavelength. For the 90-nm-thick film, the reflectance has a minimum lower than 3% at the wavelength of 600 nm and the weighted average reflectances (400-1000 nm) is 11.6%. The obtained characteristics indicate that Er2O3 films could be a promising candidate for antireflection coatings in solar cells. 相似文献
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Band Alignment and Band Gap Characterization of La2O3 Films on Si Substrates Grown by Radio Frequency Magnetron Sputtering 下载免费PDF全文
La2O3 films are grown on Si (100) substrates by the radio-frequency magnetron sputtering technique. The band alignment of the La203/Si heterojunction is analyzed by the x-ray photoelectron spectroscopy. The valence- band and the conduction-band offsets of La2 Oa films to Si substrates are found to be 2.40±0.1 and 1.66±0.3 eV, respectively. Based on 0 ls energy loss spectrum analysis, it can be noted that the energy gap of La203 films is 5.18±0.2eV, which is confirmed by the ultra-violet visible spectrum. According to the suitable band offset and large band gap, it can be concluded that La2O3 could be a promising candidate to act as high-k gate dielectrics. 相似文献
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新型半导体光催化剂钨酸铋是目前研究广泛的光催化剂,但因其电子空穴对易复合的问题,限制了光催化产氢性能。为解决这一问题,采用锂-乙二胺溶液在钨酸铋表面构筑可控氧空位缺陷和金属缺陷。通过材料表征对比了钨酸铋经锂-乙二胺处理前后的变化,并对两者进行了产氢速率测试。钨酸铋在经过锂-乙二胺处理过后产生了氧空位缺陷和降价的金属中心,材料颜色从原先的黄白色转变为黄棕色,增强了光吸收能力。颗粒的主体结构以及物质成分并未发生变化,仍保持花球状颗粒结构,但处理后钨酸铋颗粒表面原先的光滑的片状结构变得粗糙,且方形纳米薄片锋利边缘变光滑,提高了光催化反应面积。这些变化使锂-乙二胺处理后的钨酸铋光催化产氢性能相比未处理之前得到了一定的提升。 相似文献
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Annealing effects on the structure and electrical characteristics of amorphous Er2O3 films 下载免费PDF全文
Amorphous Er 2 O 3 films are deposited on Si (001) substrates by using reactive evaporation.This paper reports the evolution of the structure,morphology and electrical characteristics with annealing temperatures in an oxygen ambience.X-ray diffraction and high resolution transimission electron microscopy measurement show that the films remain amorphous even after annealing at 700 C.The capacitance in the accumulation region of Er 2 O 3 films annealed at 450 C is higher than that of as-deposited films and films annealed at other temperatures.An Er 2 O 3 /ErO x /SiO x /Si structure model is proposed to explain the results.The annealed films also exhibit a low leakage current density (around 1.38 × 10 4 A/cm 2 at a bias of 1 V) due to the evolution of morphology and composition of the films after they are annealed. 相似文献
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Er2O3 thin films are grown on oxidized Si (111) substrates by molecular beam epitaxy. The sample grown under optimized condition is characterized in its microstructure, surface morphology and thickness using grazing incidence x-ray diffraction (GIXRD), atomic force morphology and x-ray reflectivity. GIXRD measurements reveal that the Er2O3 thin film is a mosaic of single-crystal domains. The interplanar spacing d in-plane residual strain tensor ell and the strain relaxation degree ε are calculated. The Poisson ratio μ obtained by conventional x-ray diffraction is in good agreement with that of the bulk Er2O3. In-plane strains in three sets of planes, i.e. (440), (404), and (044), are isotropic. 相似文献
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