全正色散高阶谐波锁模掺Yb光纤激光器

在全正色散(ANDi)系统中,报道了最高为21阶的被动谐波锁模(HML)掺Yb光纤激光器。利用级联长周期光纤光栅(C-LPFG)作为全光纤结构的光谱滤波器,以非线性偏振演化(NPE)效应作为锁模机理,得到了重复频率可调谐的被动谐波锁模掺Yb激光输出,实现输出脉冲重复频率1.544~32.42MHz的可调谐。并进一步论证了谐波阶次的提高不仅与抽运功率有关,而且与光纤的长度有关。     

InGaAs探测器的盲元分析及P电极优化

采用扫描电容显微镜分析了平面型PIN In_(0.52)Al_(0.48)As/In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As短波红外探测器盲元产生的原因,利用半导体器件仿真工具Sentaurus TCAD对探测器中的盲元特性进行了模拟,并利用制备的Au/P-In_(0.52)Al_(0.48)As传输线结构芯片对P电极的欧姆接触进行优化.研究结果表明,P电极与扩散区外的N~--In_(0.52)Al_(0.48)As帽层形成导电通道导致了盲元的产生,优化后Au与P-In_(0.52)Al_(0.48)As帽层之间具有更低的比接触电阻为3.52×10~(-4)Ω·cm~(-2),同时Au在高温快速热退火过程中的流动被抑制,从而降低了盲元产生的概率.     

Effect of surface plasmon coupling with radiating dipole on the polarization characteristics of AlGaN-based light-emitting diodes

The optical polarization characteristics of surface plasmon (SP) coupled AlGaN-based light emitting diodes (LEDs) are investigated theoretically by analyzing the radiation recombination process and scattering process respectively. For the Al_0.5Ga_0.5N/Al/Al₂O₃ slab structure, the relative intensity of TE-polarized and TM-polarized spontaneous emission (SE) rate into the SP mode obviously depends on the thickness of the Al layer. The calculation results show that TM dominated emission will be transformed into TE dominated emission with the decrease of the Al thickness, while the emission intensities of both TE/TM polarizations will decrease significantly. In addition, compared with TM polarized emission, TE polarized emission is easier to be extracted by SP coupling. For the Al_0.5Ga_0.5N/Al nano-particle structure, the ratio of transmittance for TE/TM polarized emission can reach ～3.06, while for the Al free structure, it is only 1.2. Thus, the degree of polarization of SP coupled LED can be improved by the reasonable structural design.     

健康教育对防治儿童铅中毒作用的研究

为评价健康教育对防治儿童铅中毒的效果，将１１４名血铅（ＢＰｂ）≥１００μｇ／Ｌ的４￣７岁儿童及其家长随机分为健康教育组（Ａ组）和对照组（Ｂ组），对Ａ组家长进行多种形式的健康教育，Ｂ组无任何干预措施。研究期为四个月。期初和期末对家长进行两次“儿童健康及行为问卷”调查。研究结果时所有儿童复测ＢＰｂ一次。结果表明，首次问卷中Ａ组家长知识水平正确率低于Ｂ组（Ｐ〈０．０１），余两项的正确率差异无显著性意义（     

4-inch蓝宝石图形衬底上GaN基白光LED制备及表征

在4-inch蓝宝石图形衬底上,基于InGaN/GaN多量子阱结构制备了蓝光LED芯片,并通过与钇铝石榴石黄色荧光粉(YAG∶Ce³⁺)结合,封装成白光LED器件。简要介绍了外延生长和芯片工艺及封装流程,并对材料特性及器件性能进行了表征。外延片表面形貌良好,蓝光外延片荧光光谱(PL)显示峰值波长为442 nm。对封装后白光芯片进行电学特性测试,得出其开启与限流电压分别为2.7 V与3.6 V。此外,电致发光光谱(EL)含有两个主要的发光峰,分别是440 nm的蓝光峰以及540 nm的黄绿光峰,而随着注入电流的增加,蓝光峰位先蓝移后红移,黄绿光峰位先红移后蓝移再红移。本文中相关的芯片制备及表征技术将对固态照明研究起到一定的促进作用。