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在相分离La0.33Pr0.34Ca0.33MnO3薄膜体系中发现了大的交换偏置效应.在4K时,交换偏置场的大小达到了约1kOe.交换偏置效应可能源自薄膜内禀的电子相分离特性或薄膜的表面效应.交换偏置效应表现出强的温度、冷却磁场以及厚度依赖的关系. 相似文献
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As an elemental semiconductor, tellurium has recently attracted intense interest due to its non-trivial band topology, and the resulted intriguing topological transport phenomena. In this study we report systematic electronic transport studies on tellurium flakes grown via a simple vapor deposition process. The sample is self-hole-doped, and exhibits typical weak localization behavior at low temperatures. Substantial negative longitudinal magnetoresistance under parallel magnetic field is observed over a wide temperature region, which is considered to share the same origin with that in tellurium bulk crystals, i.e., the Weyl points near the top of valence band. However, with lowering temperature the longitudinal magnetoconductivity experiences a transition from parabolic to linear field dependency, differing distinctly from the bulk counterparts. Further analysis reveals that such a modulation of Weyl behaviors in this low-dimensional tellurium structure can be attributed to the enhanced inter-valley scattering at low temperatures. Our results further extend Weyl physics into a low-dimensional semiconductor system, which may find its potential application in designing topological semiconductor devices. 相似文献
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MICAtronics, based on the functional oxide/mica heterostructures, has recently attracted much attention due to its potential applications in transparent, flexible electronics and devices. However, the weak van der Waals interaction decreases the tolerable lattice mismatch and thus limits the species of function oxides that are able to be epitaxially grown on mica. We successfully fabricate relatively high-quality epitaxial anatase TiO_2 thin films on mica substrates. Structural analyses reveal that the carefully chosen growth temperature(650℃) and suitable crystalline phase(anatase phase) of TiO_2 are the key issues for this van der Waals epitaxy. Moreover, as a buffer layer, the TiO_2 layer successfully suppresses the decomposition of BiFeO_3 and the difficulty of epitaxial growth of BiFeO_3 is decreased. Therefore, relatively high-quality anatase TiO_2 is proved to be an effective buffer layer for fabricating more functional oxides on mica. 相似文献
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对在Ge(111)表面沿着<11-0>方向外延生长的单斜FeGe纳米线进行研究,结果发现,虽然块体单斜FeGe相是反铁磁性,其纳米线却在200 K以下表现出强铁磁有序.每个Fe原子的磁矩为0.8 μB.密度泛函计算揭示外延产生的晶格压缩使类派尔斯反铁磁基态失稳,从而稳定实验观察到的铁磁性. 相似文献
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对在Ge(111)表面沿着〈110〉方向外延生长的单斜FeGe纳米线进行研究,结果发现,虽然块体单斜FeGe相是反铁磁性,其纳米线却在200 K以下表现出强铁磁有序.每个Fe原子的磁矩为0.8μB.密度泛函计算揭示外延产生的晶格压缩使类派尔斯反铁磁基态失稳,从而稳定实验观察到的铁磁性. 相似文献
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Giant-Capacitance-Induced Wide Quantum Hall Plateaus in Graphene on LaAlO_3/SrTiO_3 Heterostructures
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Hybrid structures of two distinct materials provide an excellent opportunity to optimize functionalities.We report the realization of wide quantum Hall plateaus in graphene field-effect devices on the LaAlO3/SrTiO3 heterostructures.Well-defined quantized Hall resistance plateaus at filling factors ν=±2 can be obtained over wide ranges of the magnetic field and gate voltage,e.g.,extending from 2 T to a maximum available magnetic field of 9 T.By using a simple band diagram mo... 相似文献
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Epitaxial graphene grown on silicon carbide(Si C/graphene) is a promising solution for achieving a highprecision quantum Hall resistance standard. Previous research mainly focused on the quantum resistance metrology of n-type Si C/graphene, while a comprehensive understanding of the quantum resistance metrology behavior of graphene with different doping types is lacking. Here, we fabricated both n-and p-type Si C/graphene devices via polymer-assisted molecular adsorption and conducted systematic... 相似文献
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