扩镓Si基溅射Ga2O3氮化反应生长GaN薄膜

采用射频磁控溅射在扩镓硅基上溅射Ga2O3氮化反应生长GaN薄膜。用X射线衍射(XRD)、扫描电镜(SEM)、选区电子衍射(SAED)、光电能谱(XPS)和荧光光谱(PL)对样品进行结构、形貌、组分和发光特性的分析。XRD、SAED和XPS分析证明,采用此方法得到六方纤锌矿结构的GaN多晶膜。SEM显示薄膜由均匀、结合紧密的纳米微晶粒组成,其直径约为50～100nm。PL发光谱显示位于344nm处,相对于365nm明显蓝移的带边峰,此发光峰应归功于自由载流子的复合。     

扩镓硅基GaN晶体膜质量的电镜分析

采用射频磁控溅射工艺在扩镓硅基上溅射Ga2O3薄膜,氮化反应组装GaN晶体膜,并对其生长条件进行研究．用扫描电镜(SEM)和X射线衍射(XRD)对样品进行结构、形貌分析．观测结果表明：采用此方法得到的在预沉积扩镓硅基上生长的GaN晶体膜,随着扩镓时间的增加,薄膜的晶化程度得到明显提高,而氮化时间对构成GaN薄膜的颗粒形态影响不大．     

Updated and revised neutron reaction data for 233U

A complete set of n+²³³U neutron reaction data from 10^-5 eV-20 MeV is updated and revised based on the evaluated experimental data and the feedback information of various benchmark tests. The main revised quantities are nubars, cross sections as well as angular distributions, etc. The benchmark tests indicate that the present evaluated data achieve very promising results.