排序方式: 共有11条查询结果,搜索用时 15 毫秒
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采用正交试验优化GC-MS测定血清胆固醇及其标志物的样品前处理条件,并对最优试验方案进行方法学评价。采用L16(211)正交设计对影响GC-MS测定血清胆固醇及其标志物前处理的3个关键步骤共7个因素——皂化(KOH-乙醇浓度、皂化温度和时间)、萃取(正己烷用量)和衍生化(衍生化温度、时间和用量)进行优化。得到最优前处理条件组合如下:KOH-乙醇溶液浓度为1 mol·L-1;皂化温度70 ℃;皂化时间60 min;萃取剂用量2 mL;衍生化温度70 ℃;衍生化时间60 min;衍生化试剂用量100 μL。所建方法准确性和精密性良好,方法学评价指标优于文献报道。 相似文献
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Ⅲ-nitride semiconductor materials have excellent optoelectronic properties, mechanical properties, and chemical stability, which have important applications in the field of optoelectronics and microelectronics. Two-dimensional(2D)materials have been widely focused in recent years due to their peculiar properties. With the property of weak bonding between layers of 2D materials, the growth of Ⅲ-nitrides on 2D materials has been proposed to solve the mismatch problem caused by heterogeneous epitax... 相似文献
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色谱质谱联用技术研究30%二甲基二乙氧基硅烷70%正硅酸乙酯复合醇盐 … 总被引:1,自引:0,他引:1
采用色谱质谱联用技术研究了1种复合醇盐:30%二甲基二乙氧基硅烷/70%正硅酸乙酯的水解聚合过程,并由此分析了这两种有机-无机醇盐的相互作用机制和聚合方式,实验结果指出,DDS的添加抑制了TEOS的自聚合,使得体系中形成了大量的DDS的自聚合环状分子以及TEOS和DDS的共聚合高分子,由于后者对水解聚合的加速作用,使得30%DDS/70%TEOS系统具有最短的凝胶时间。 相似文献
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We propose a new non-intrusive flow measurement method using the distributed feedback fiber laser(DFB-FL)as a sensor to monitor flow in the pipe.The relationship between the wavelength of the DFB-FL and the liquid flow rate in the pipeline is derived.Under the guidance of this theory,the design and test of the flow sensor is completed.The response curve is relatively flat in the frequency range of 10 Hz to 500 Hz,and the response of the flow sensor has high linearity.The flow from 0.6 m^3/h to 25.5 m^3/h is accurately measured under the energy analysis method in different frequency intervals.A minimum flow rate of 0.046 m/s is achieved.The experimental results demonstrate the feasibility of the new non-intrusive flow measurement method based on the DFB-FL and accurate measurement of small flow rates. 相似文献
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AlGaN基材料作为带隙可调的直接带隙宽禁带半导体材料,是制备紫外光电子器件的理想材料。在无法获得大尺寸、低成本的同质衬底的情况下,高质量AlN薄膜的异质外延是促进紫外光电子器件发展的关键。本文中,通过调节蓝宝石衬底上AlN的金属有机物化学气相沉积(MOCVD)生长模式产生高密度纳米级孔洞,利用纳米级孔洞降低AlN的位错,并在此基础上外延了AlGaN量子阱结构,得到了275 nm波段的深紫外LED薄膜,并制备了开启电压约为4.8 V,反向漏电电流仅为2.23 μA(-3.0 V电压时)的深紫外LED器件。 相似文献
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溶胶—凝胶法制备CH3SiO3/2—SiO2孤立膜 总被引:2,自引:0,他引:2
采用溶胶凝胶法,以20%正硅酸乙酯/80%甲基三乙氧基硅烷为先驱体,通过控制溶胶过程及选择合适的成膜参数,并以一种疏不性膜为可分离载体,制备得到了大尺寸的,厚度可达50 ̄1000μm的无支撑孤立膜。研究了制膜过程中正硅酸乙酯对抑制结晶沉淀及成膜行为的影响。采用AFM观察了膜的表面形貌,采用XRD对结晶沉淀进行了结构分析。 相似文献
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III-nitride semiconductor materials have excellent optoelectronic properties, mechanical properties, and chemical stability, which have important applications in the field of optoelectronics and microelectronics. Two-dimensional (2D) materials have been widely focused in recent years due to their peculiar properties. With the property of weak bonding between layers of 2D materials, the growth of III-nitrides on 2D materials has been proposed to solve the mismatch problem caused by heterogeneous epitaxy and to develop substrate stripping techniques to obtain high-quality, low-cost nitride materials for high-quality nitride devices and their extension in the field of flexible devices. In this progress report, the main methods for the preparation of 2D materials, and the recent progress and applications of different techniques for the growth of III-nitrides based on 2D materials are reviewed. 相似文献