排序方式: 共有3条查询结果,搜索用时 203 毫秒
1
1.
A new self-heating effect model for 4H-SiC MESFETs is proposed based
on a combination of an analytical and a computer aided design (CAD)
oriented drain current model. The circuit oriented expressions of
4H-SiC low-field electron mobility and in-complete ionization rate,
which are related to temperature, are presented in this model, which
are used to estimate the self-heating effect of 4H-SiC MESFETs. The
verification of the present model is made, and the good agreement
between simulated results and measured data of DC I-V curves with
the self-heating effect is obtained. 相似文献
2.
A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs 总被引:1,自引:0,他引:1
下载免费PDF全文
![点击此处可从《中国物理》网站下载免费的PDF全文](/ch/ext_images/free.gif)
This paper reports that a 4H-SiC MESFET (Metal Semiconductor Field
Effect Transistor) large signal drain current model based on
physical expressions has been developed to be used in CAD tools. The
form of drain current model is based on semi-empirical MESFET model,
and all parameters in this model are determined by physical
parameters of 4H-SiC MESFET. The verification of the present model
embedded in CAD tools is made, which shows a good agreement with
measured data of large signal DC I-V characteristics, PAE (power
added efficiency), output power and gain. 相似文献
3.
Model and analysis of drain induced barrier lowering effect for 4H--SiC metal semiconductor field effect transistor
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
Based on an analytical solution of the two-dimensional Poisson
equation in the subthreshold region, this paper investigates the
behavior of DIBL (drain induced barrier lowering) effect for short
channel 4H--SiC metal semiconductor field effect transistors
(MESFETs). An accurate analytical model of threshold voltage shift
for the asymmetric short channel 4H--SiC MESFET is presented and
thus verified. According to the presented model, it analyses the
threshold voltage for short channel device on the L/a (channel
length/channel depth) ratio, drain applied voltage VDS and
channel doping concentration ND, thus providing a good basis
for the design and modelling of short channel 4H--SiC MESFETs device. 相似文献
1