D—AKNS族的换位表示

本文根据曹策问教授的想法,求得了与D-AKNS族发展方程相联系的特征值之泛函梯度与Lenard算子对;并由此得到了D-AKNS族非线性发展方程的换位表示。文末还讨论了换位表示与定态D-AKNS方程之间的关系.     

First-Principles Study on the Electronic Structures for Y^3＋：PbWO4 Crystals

The possible defect models of Y^3＋：PbWO4 crystals are discussed by defect chemistry and the most possible substituting positions of the impurity Y^3＋ ions are studied by using the general utility lattice program （GULP）. The calculated results indicate that in the lightly doped Y^3＋ ：PWO crystal, the main compensating mechanism is [2Ypb^＋ ＋ VPb^2-], and in the heavily doped Y^3＋ ：PWO crystal, it will bring interstitial oxygen ions to compensate the positive electricity caused by YPb^＋, forming defect clusters of [2Ypb^＋ ＋Oi^2-] in the crystal. The electronic structures of Y3＋ ：PWO with different defect models are calculated using the DV-Xα method. It can be concluded from the electronic structures that, for lightly doped cases, the energy gap of the crystal would be broadened and the 420nm absorption band will be restricted; for heavily doped cases, because of the existence of interstitial oxygen ions, it can bring a new absorption band and reduce the radiation hardness of the crystal.     

偶函数的一个性质

1性质的引入我们知道奇函数f(x)如果在x=0处有定义,那么就有f(0)=0.其实偶函数也有一个对偶形式的性质:若偶函数f(x)在x=0处有定义且可导,则f′(0)=0.2性质的证明因为偶函数f(x)在x=0处可导,所以limx→0 f(x)-f(0)x=limx→0-f(x)-f(0)x.又∵f(x)=f(-x),x→0-即-x→0 ,∴lim-x→     

变In组分沟道的MM-HEMT材料电子输运特性研究

在变缓冲层高迁移率晶体管（MM_HEMT）器件中，二维电子气的输运性质对器件性能起着决定作用.通过低温下二维电子气横向电阻的量子振荡现象，结合变温度的Hall测量，系统研究了不同In组分沟道MM_HEMT器件中子带电子迁移率和浓度随温度的变化关系.结果表明，沟道中In组分为0.65的样品，材料电学性能最好，In组分高于0.65的样品，严重的晶格失配将产生位错，引起迁移率下降，大大影响材料和器件的性能. 关键词： 变缓冲层高迁移率晶体管 Shubnikov_de Hass 振荡     

Na离子和Cl离子引起He原子直接多重电离过程的研究

利用2～8 MeV的Naq+、Clq+(q=2,3,4,5)轰击氦原子,对碰撞的直接多重电离过程进行研究.实验采用反冲离子-散射离子飞行时间符合技术,通过反冲离子飞行时间谱区分不同价态反冲离子;利用静电偏转和位置灵敏探测技术区分不同电荷态散射离子;结合CAMAC-PC多参数获取系统得到一定价态散射离子所对应的反冲离子电荷态分布谱;经分析该谱得到直接多重电离截面与直接单电离截面之比R21.讨论了R21随入射离子速度和电荷态的变化关系.     

高分子基PTC复合材料的研究及其应用

本文概述了高分子基PTC复合材料最近的研究动态，阐述了其作为热敏材料在自控温加热系统和过流保护元件方面的广泛应用。     

镓(Ⅲ)-茜素氨羧络合剂在碳糊电极上的阳极吸附伏安法研究及应用

研究了镓(Ⅲ)-茜素氨羧络合剂(ALC)在碳糊电极上的阳极吸附伏安行为,并以此建立了一种高灵敏度、高选择性测定镓的吸附伏安法.在0.12 mol/L HAc-NaAc-0.24 mol/L邻苯二甲酸氢钾底液(pH 4.5)中,-0.10 V (vs.SCE) 富集90 s (或180 s),以250 mV/s扫速线性扫描至0.90 V, Ga3+-ALC在碳糊电极上产生灵敏的与ALC的峰电位相差近230 mV的吸附氧化峰,其二次导数峰电流与镓浓度在5.0×10-10～8.0×10-7 mol/L范围内呈线性关系;富集240 s检出限达3.0×10-10 mol/L(S/N=3).探讨了电极反应机理.该法用于粮食样品中镓的测定,结果满意.     

预浓缩/色谱-质谱测量大气中挥发性有机硫化合物

硫循环是生物地化循环中最复杂的循环之一. 近年来,由于人类活动的影响,大气中硫化物含量急剧增加. 这些硫化物与大气中自由基发生作用,形成SO2、H2SO4和硫酸盐, 导致环境酸化, 酸沉降加剧.硫酸盐气溶胶的形成还改变了大气云层特性,影响大气臭氧含量的垂直分布以及大气热量辐射,对温室效应有一定的贡献[1-3].挥发性有机硫化合物中的甲硫醇(MT),甲硫醚(DMS),二硫化碳(CS2)和二甲二硫(DMDS)还是国家标准控制《恶臭污染物排放标准》中规定的4种恶臭气体,对大气环境质量造成一定的影响.     

EPR Study on the complex formed by charge-transfer process between ground-state acceptor chloranil and nine donors

EPR study showed that the semi-quinone radical anion of chloranil (TCQ) was formed in a charge-transfer process between ground state chloranil as acceptor and each one of the following ground state donors,i.e.,N,N'-diethyl aniline (DEA),phenothiazine (PTZ),carbazole (CBZ),pyrene (PY),ferrocene (FRO),triphenylphosphine (TPP),triethylamine (TEA),anthracene (AN) and N,N-diethyl-3-aminophenyl ester of palmitic acid (DPP).Our results indicate that there is a tunneling effect for the ground-state charge-transfer process between chloranil and the donor.