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强脉冲X射线辐照Si-SiO2界面对C-V 和I-V特性曲线的影响 总被引:1,自引:1,他引:0
利用强脉冲X射线对Si-SiO2界面进行了辐照,测量了C-V曲线和I-V曲线。实验发现,经过强脉冲X射线对Si-SiO2界面进行的辐照,使C-V曲线产生了正向漂移,这一点与低剂量率辐射结果不同;辐射后,感生I-V曲线产生畸变;特别地,从I-V曲线上还反映出强脉冲X射线辐照的总剂量效应造成电特性 参数明显退化,最后甚至失效。讨论了强脉冲X射线辐照对Si-SiO2界面产生损伤的机理,并对实验结果进行了解释。 相似文献
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High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap 总被引:1,自引:0,他引:1 下载免费PDF全文
A transient peak current as high as 5.6 kA is obtained by a GaAs photoconductive semiconductor switch (PCSS) in series with a spark gap. Based on the characteristics of the GaAs PCSS, mechanisms of discharge between the PCSS and the spark gap are discussed. It is implied that a hybrid operation mode of photo-activated charge domain occurs due to the superposition of the bias voltage and the instantaneous radio frequency voltage. 相似文献
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We report our experimental observation of charge domain oscillation in semi-insulating GaAs photocon-ductive semiconductor switches (PCSSs). The high-gain PCSS is intrinsically a photon-activated charge domain device. It is the photon-activated carriers that satisfy the requirement of charge domain formation on carrier concentration and device length product of 1012 cm-2. We also show that, because of the repeated process of domain formation, the domain travels with a compromised speed of electron saturation velocity and the speed of light. As a result, the transit time of charge domains in PCSS is much shorter than that of traditional Gunn domains. 相似文献
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