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通过在GaAs(100)表面生长具有弱有序的bcc相Co超薄膜,利用同步辐射光电发射和XPS,研究了室温下不同氧暴露量时Co膜的氧吸附行为。价带谱和Co3p发射谱结果表明,当暴露氧量低于4L时,氧解离吸附;更高的氧暴露量导致表面CoO相的成核与生成。 相似文献
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INTERFACE FORMATION OF Ge/ZnSe(100) AND Ge/ZnS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION 下载免费PDF全文
The microscopic evolution of interface formation between Ge and Ⅱ-Ⅵ compounds such as ZnSe and ZnS single crystals has been studied by synchrotron radiation photoemission spectroscopy and low energy electron diffraction. Core level intensity measurements from the substrate as well as from the overlayer show a nearly ideal two-dimensional growth mode for the deposition of Ge on ZnSe(100) surface. How-ever, there is a certain deviation from the ideal two-dimensional mode in the case of Ge/ZnS(111) due to the diffusion of substrate atoms into Ge overlayer. Surface semi-tire core level spectra indicate that the reaction of Ge with S atoms at Ge/ZnS(111) interfaces is much stronger than that of Ge with Se atoms at Ge/ZnSe(100) interfaces. 相似文献
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