含气率对PTS时压力容器内流动与传热的影响

本文对反应堆压力容器紧急安注时的流动与传热特性在1/10的模型上进行了流动可视化、局部传热系数以及混合函数的试验研究。针对三个热冲击敏感区域的部分测点,比较了环腔流速为0.5m/s、安注流速为1～30 m/s时不同含气率对下降环腔内流动与传热特性的影响,得出并分析了不同测点传热系数、混合函数的变化规律。研究结果表明:随着含气率增大,安注流体与环腔流体的混合增强;下降环腔内的含气率对小安注流速时的流动与传热影响显著,而对大安注流速时影响较小。     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

Vacuum Fluctuations and Motion of a Charged Test Particle in a Cylindrical Spacetime

The effects of quantum electromagnetic fluctuations upon the motion of a test charged particle are examined in a cylindrical spacetime in which one spatial is compactified. The mean squared fluctuations in the velocity and position of the test particle are calculated. It is found that the random motion of the test particle will be anisotropic. The possible consequences for theories with extra compactified spatial dimensions are discussed.     

第一性原理计算钛酸铅A位掺杂对其负热膨胀性的影响

近年来,实验发现钛酸铅基材料具有负热膨胀性,且其热膨胀程度会受到掺杂元素的影响. 目前所研究的A位掺杂体系中,仅Cd原子掺杂能使钛酸铅负热膨胀性增强. 所以研究A位掺杂钛酸铅,比较Cd原子与其他原子在掺杂钛酸铅时化学键的异同,有助于深刻理解钛酸铅负热膨胀的本质. 本文利用第一性原理,分别优化了Sr、Ba、Cd掺杂钛酸铅的晶格常数,计算了它们的态密度和电荷密度. 结果表明Cd―O键的共价性强于Pb―O键,而Ba―O键和Sr―O键几乎呈离子性,Ba/Sr对Pb的替代削弱了化合物的共价性,降低了自发极化强度. 与实验测量的热膨胀系数对比可以发现,A位原子与氧原子之间的共价性增强,化合物负热膨胀程度升高;若A位原子与氧原子之间的共价性削弱,负热膨胀程度降低. 可见A位原子与氧原子之间的共价性影响了钛酸铅基化合物负热膨胀性.     

Zn(NCN)单轴的负热膨胀性及机理研究

负热膨胀(NTE)是一种反常的物理现象, 已在合金和框架结构化合物等材料中被观察到, 但NTE材料的种类仍然有限. 本文合成了一种单轴NTE材料Zn(NCN), 该材料在c轴方向及在100~475 K下的热膨胀系数为-3.35×10^?6 K^?1, 而a轴和b轴方向则呈低热膨胀性, 体积具有低的热膨胀系数[6.13×10^?6 K^?1(100~475 K)]. 通过同步辐射X射线衍射、 扩展X射线吸收精细结构和拉曼光谱等方法, 研究了Zn(NCN)的NTE机理. 结果表明, Zn—N键具有明显的横向振动, 一些低频振动模Grüneisen参数为负值. 直接的实验证据表明, N=C=N的横向振动以及准刚性ZnN₄四面体的耦合旋转和扭摆导致了c轴方向的NTE.     

喹喔啉酮类JNK3抗肿瘤抑制剂的绿色合成——推荐一个综合化学实验

介绍了一个荧光光谱方面新的实验项目:以苝和六苯基噻咯作为发光物质的特征分子,通过测定其不同聚集状态下的荧光光谱,观察聚集荧光淬灭ACQ(aggregation-causedquenching)和聚集诱导发光AIE(aggregationinduced emission)两种不同的发光现象;利用晶体学数据库CCDC (Cambridge Crystallographic Data Centre)检索特征分子的晶体结构,从分子晶体结构层面分析AIE和ACQ发光现象产生的原因,在此基础上探讨不同发光机制和分子状态的关系。论文详细描述了实验的设计思想、实验内容和实验结论,并结合教学过程,分析了该实验在开阔学生视野、提高认知水平及培养科研素养等方面所取得的教学效果。     

制样方法对固体粉末X射线光电子能谱测试结果的影响

为了得到准确且分辨率高的X射线光电子能谱(XPS)数据,采用不同制样方法对不同类型的导电、不导电和混合粉末的测试结果进行了研究. 从图谱半峰宽、是否有荷电、真实性、制样效率和数据处理等方面阐述不同制样方法对测试结果的影响. 试验结果表明,对于导电和不导电粉末,粘取制样略优于铟片制样,其中使用碳导电胶带制样效果更好. 对于混合样品,Scotch双面胶带粘样后的测试结果优于其他3种制样方式. 此外,铟片制样可作为数据处理时荷电校正的参考方法.     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.     

Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.     

碰撞几何构型对相对论重离子碰撞旁观者核子的影响（英文）

在不同的核物质对称能下利用约束的Skyrme-Hartree-Fock-Bogolyubov计算得到了形变核的核子分布,基于此计算了RHIC能量下形变核碰撞产生的自由旁观者核子数及中质子产额比,并分析了中子皮和碰撞几何构型的影响。本工作发现,相比于其他碰撞构型,长椭球核的头对头碰撞和扁椭球核的腰对腰碰撞产生的自由旁观者核子数最少。旁观者中质子产额比敏感于中子皮的平均厚度,因此是对称能的良好探针,但不同碰撞几何构型所得到的产额比依赖于中子皮的极化角分布。在某些碰撞体系中,碰撞几何构型的效应大约为对称能效应的50%。由于²³⁸U和⁹⁶Zr的特殊形变中子皮,相对于其他碰撞构型,旁观者中质子产额比对对称能的敏感性在头对头的²³⁸U+²³⁸U碰撞和腰对腰的⁹⁶Zr+⁹⁶Zr碰撞得到了增强。此研究可能开启新的研究方向,即通过筛选高能形变核碰撞的几何构型来研究形变的中子皮分布。