脂质体导向给药治疗缺血性心脏病的可行性研究(Ⅰ)

本工作在离体大鼠心肌细胞、离体灌流大鼠和家兔心脏模型上,对脂质体作为药物载体导向治疗缺血性心脏病的可行性进行了基础研究。结果表明,心肌细胞可通过融合(Fusion)、内吞(Endocytosis)、吸附(Adsorption)和磷脂分子交换(Exchange)四种方式与脂质体相互作用。细胞摄取脂质体的方式主要取决于脂质体的理化性质。缺氧改变了心肌细胞对脂质体的摄取方式并增加其摄取能力。缺血心肌组织对脂质体、尤其对带正电荷脂质体的摄取显著增加。其摄取量按序为缺血-再灌注区>梗塞边缘区>非缺血区>梗塞区。上述实验结果提示:脂质体作为药物载体可将药物输送到缺血心肌组织和心肌细胞内。     

(n)nc-Si：H/(p)c-Si异质结中载流子输运性质的研究

采用常规等离子体增强化学气相沉积工艺,以高H₂稀释的SiH₄作为反应气体源和PH₃作为磷原子的掺杂剂,在p型(100)单晶硅((p)c-Si)衬底上, 成功地生长了施主掺杂型纳米硅膜((n)nc-Si:H),进而制备了(n)nc-Si:H/(p)c-Si异质结,并在230—420Ｋ温度范围内实验研究了该异质结的Ｉ-Ｖ特性.结果表明,(n)nc-Si:H/(p)c- Si异质结为一典型的突变异质结构,具有良好的温度稳定性和整流特性.正向偏压下 关键词： (n)nc-Si:H/(p)c-Si异质结 能带模型 电流输运机构 温度特性     

High-Current Multi-Finger Mesa InGaAs/InP DHBTs

Characteristics of single- and multi-finger mesa InGaAs/InP double heterojunction bipolar transistors （DHBTs） are compared. The current gain decreases with the increasing number nf of the emitter fingers due to the mutual thermal interaction between the fingers. The Kirk current can be as high as 150mA for four-finger DHBT. No degradation of the peak of the current gain cutoff frequency ft is found for multi-finger DHBTs. The peak of the maximum oscillation frequency fmax decreases with an increase of nf due to the increasing parasitic resistance of the base. The results are very helpful for applications of the common-base DHBTs in power amplifiers operating at very high frequencies.     

InGaAsSb/AlGaAsSb长波长多量子阱激光器有源区的优化设计

系统地研究了波长为2.7μm的InGaAsSb/AlGaAsSb多量子阱激光器中有源区的优化设计.分别用含应变势的6带KP模型和抛物带模型计算价带和导带的能带结构，并得到薛定谔方程和泊松方程的自洽解，由此计算量子阱在载流子注入时的增益谱.研究表明制约量子阱增益的主要因素不是跃迁矩阵元，而是粒子数反转程度，尤其是空穴填充HH1子带的概率.增加压应变或减小阱宽都会提高量子阱增益.前者降低了价带HH1子带空穴的平面内有效质量；后者拉大了价带子带间距，尽管它同时略微增加了空穴有效质量.这两种因素都导致价带顶空穴态     

基于多尺度总体最小二乘的图像去噪

提出了一种基于多尺度总体最小二乘的图像去噪算法.采用平稳小波变换对噪音图像进行分解,分别对各个分解层的高频子带,通过总体最小二乘算法估计信号小波系数;并且考虑到不同尺度小波系数之间的相关性,将尺度相关性约束到总体最小二乘算法中,进而准确估计各高频子带信号小波系数,再由估计的信号小波系数通过小波逆变换得到去噪图像.实验结果表明,考虑尺度间相关性的总体最小二乘平稳小波变换图像去噪算法能有效去除图像噪音,在信噪比和视觉质量上有了较大改善.     

Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based In_xGa_(1-x)As/In_(0.52)Al_(0.48)As HEMT structures

The structure of In P-based In_xGa_(1-x) As/In0.52Al0.48 As pseudomorphic high electron mobility transistor(PHEMT)was optimized in detail.Effects of growth temperature,growth interruption time,Si δ-doping condition,channel thickness and In content,and inserted Al As monolayer(ML) on the two-dimensional electron gas(2DEG) performance were investigated carefully.It was found that the use of the inserted Al As monolayer has an enhancement effect on the mobility due to the reduction of interface roughness and the suppression of Si movement.With optimization of the growth parameters,the structures composed of a 10 nm thick In0.75Ga0.25 As channel layer and a 3 nm thick Al As/In0.52Al0.48 As superlattices spacer layer exhibited electron mobilities as high as 12500 cm~2·V-1·s~(-1)(300 K) and 53500 cm~2·V~(-1_·s~(-1)(77 K) and the corresponding sheet carrier concentrations(Ns) of 2.8×10~(12)cm~(-2)and 2.9×1012cm~(-2),respectively.To the best of the authors' knowledge,this is the highest reported room temperature mobility for In P-based HEMTs with a spacer of 3 nm to date.     

掺杂纳米硅薄膜中电子自旋共振研究

研究了掺杂纳米硅薄膜(nc∶Si∶H)中的电子自旋共振(ESR)及与之相关的缺陷态.样品是用等离子体增强化学气相沉积方法制成,为两相结构,即纳米晶粒镶嵌于非晶本体之中.对掺磷的nc-Si∶H样品,测量出其ESR信号的g值为1.9990—1.9991,线宽ΔH_pp为(40—42)×10^-4T,ESR密度Nss为10¹⁷cm^-3数量级.对掺硼的nc-Si∶H样品,其ESR信号的g值为2.0076—2.0078,ΔH_{关键词： 纳米硅薄膜 微结构 电子自旋共振}     

脂质体导向给药治疗缺血性心脏病的可行性研究(Ⅱ)

在离体大鼠心脏灌流模型上,发现用高[Ca~(2+)](4.5mmol/L)、高[K~+](8.7mmol/L)或自由基发生系统灌流,显著增加心肌对脂质体的摄取。静脉注射与大鼠心肌细胞抗体共价结合的脂质体,显著增强了脂质体趋心肌组织的靶向性。用脂质体携载超氧化物歧化酶(superoxide dismutase,SOD)治疗大鼠心肌缺血-再灌注损伤,其疗效远优于单用SOD治疗。实验结果表明,脂质体作为药物载体治疗缺血性心脏病可能具有临床应用前景。     

Pulse Wavelength Scan of Room-Temperature Mid-Infrared Distributed Feedback Quantum Cascade Lasers for N2O Gas Detection

The tunable diode laser absorption spectroscopy under a pulse wavelength scan scheme is adapted to home-made room-temperature mid-infrared distributed feedback quantum cascade lasers; and identification of N2O spectral fingerprint is demonstrated experimentally. By driving the laser at 800ns pulse duration, a wave number tuning of about 1.6cm^-1 is produced, which make both 1289.04cm^-1 and 1289.86cm^-1 absorption fingerprints of N2O gas to be definitely assigned. The measured relative absorption intensity is consistent with the HITRAN data precisely.     

InGaAsSb／AIGaAsSb长波长多量子阱激光器有源区的优化设计

系统地研究了波长为2．7μm的InGaAsSb／AlGaAsSb多量子阱激光器中有源区的优化设计，分别用含应变势的6带KP模型和抛物带模型计算价带和导带的能带结构，并得到薛定谔方程和泊松方程的自洽解，由此计算量子阱在载流子注入时的增益谱，研究表明制约量子阱增益的主要因素不是跃迁矩阵元，而是粒子数反转程度，尤其是空穴填充HHl子带的概率，增加压应变或减小阱宽都会提高量子阱增益，前者降低了价带HHl子带空穴的平面内有效质量；后者拉大了价带子带间距，尽管它同时略微增加了空穴有效质量，这两种因素都导致价带顶空穴态密度的降低，提高了空穴在HHl子带的填充概率，最终提高了量子阱的增益，所得结论与已有的实验报道相符。