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INTERFACE FORMATION OF Ge/ZnSe(100) AND Ge/ZnS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION 下载免费PDF全文
The microscopic evolution of interface formation between Ge and Ⅱ-Ⅵ compounds such as ZnSe and ZnS single crystals has been studied by synchrotron radiation photoemission spectroscopy and low energy electron diffraction. Core level intensity measurements from the substrate as well as from the overlayer show a nearly ideal two-dimensional growth mode for the deposition of Ge on ZnSe(100) surface. How-ever, there is a certain deviation from the ideal two-dimensional mode in the case of Ge/ZnS(111) due to the diffusion of substrate atoms into Ge overlayer. Surface semi-tire core level spectra indicate that the reaction of Ge with S atoms at Ge/ZnS(111) interfaces is much stronger than that of Ge with Se atoms at Ge/ZnSe(100) interfaces. 相似文献
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用同步辐射光电子能谱测量了Si/ZnS(111)及(100)异质结的价带偏移ΔEv.对于Si/ZnS(111)及(100)两界面,ΔEv的实验结果均为(1.9±0.1)eV,与已有理论预期值相当符合,但与Maierhofer所报告的ZnS/Si(111)异质结测量结果之间则存在明显差别.该实验结果表明对于Si/ZnS极性界面,互逆性规则(commutativity rule)可能不成立,就此进行了讨论.
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