关于CoGa_3的晶体结构

CoGa_3的晶体结构,Schubert等人曾作过报导。他们认为:CoGa_3和FeGa_3一样,是IrIn_3的同型结构,其空间群为D_(2d)~8-P4-n2,a=6.25kX,c/a=1.03_5。但FeGa_3并不是IrIn_3的同型结构,因而在我们对Co-Ga二元合金进行的系统研究中,关于CoGa_3的结构,还必须作进一步探讨。     

Mn3Ga的晶体结构

本文用X射线粉末法,测定了Mn₃Ga的晶体结构。Mn₃Ga属六角晶系。26.8at.%Ga的合金在20℃的点阵常数是:a=5.4065?,c=4.3537?,c/a=0.8053。空间群为D_6h⁴-P6₃/mmc。每个单胞含两个化合式量,其中6个Mn原子占据6(h)的位置,原子参数x_h=0.837,2个Ga原子占据2(c)的位置。这是一个畸变型的DO₁₉有序密堆积超结构。Mn-Ga采内相当于这个结构的均匀范围并不包括理想成分在内,而偏移在富Ga的一边。     

2KIO_3·HCl单晶的生长及其光学和电学性质

本文研究了2KIO_3·HCI单晶的水溶液生长条件、结晶形态及其极性。就该晶体的透过率、光性方位及折射率等光学性质作了测量和讨论。观察到了YAG激光1.064μm位相匹配倍频现象。对该晶体的热电、压电、介电及电导等电学性质也作了测量。该晶体的各向异性现象很值得注意。     

KLiSO4单晶的电学性质

我们证实了KLiSO₄为Li离子导体。通过测定样品中的电位分布,确定其载流子为间隙Li离子和Li空位。其电流弛豫在一定时域内遵从负幂次衰减规律。与之对应,在一定频域内存在与频率成负幂次关系的介电色散。在相变温度附近,本底电流、直流电导率和表观介电常数除发生跃变外还出现一个尖锐的小峰。此峰只有在变温速率较慢时才能观察到,表明该相变具有弛豫过程。 关键词：     

INFLUENCE OF γ-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION

In this paper the influence of γ-radiation on the dielectric constants of Rb₂ZnCl₄ crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with γ-radiation or not. For the γ-irradiated sample, its transition point, T_c, between the INC and C phases is not changed, but the peak value of the dielectric constant at T_c increases abruptly, compared with that before γ-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from γ-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples.     

INFLUENCE OF γ-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION

In this paper the influence of γ-radiation on the dielectric constants of Rb₂ZnCl₄ crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with γ-radiation or not. For the γ-irradiated sample, its transition point, T_c, between the INC and C phases is not changed, but the peak value of the dielectric constant at T_c increases abruptly, compared with that before γ-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from γ-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples.