Influence of Inert Gas Pressure on Growing Rate of Nanocrystalline Silicon Film Prepared by Pulsed Laser Deposition

Nanocrystalline silicon film (nc-Si) was prepared by pulsed laser deposition in different inert gas atmospheres such as He, Ne and Ar. The influence of inert gas pressure on growing rate of the film was investigated. The results show that with increasing gas pressure, growing rate first increases and reaches its maximum and then decreases; the gas pressure at the maximum of growing rate is proportional to the reciprocal of atomic mass of gas. The rate maximum is 0.315 A/pulse when He gas pressure is 8.3 Pa. The dynamic process is analysed theoretically by means of resputtering from the film surface and scattering of ablated particles. Ehrthermore, our results are compared with those in the case of Ag target.     

新型HPW/SiO2复合介孔材料的合成与表征

合成了一种新型的HPW/SiO2复合介孔材料,通过XRD,TEM,UV-Vis和FTIR等表征证明,HPW均匀且稳定地包藏到介孔材料由SiO2网络组成的孔壁之中.催化结果表明,其在大分子催化反应中有较高的活性,在酯化反应中连续循环使用未发现活性组分流失,表明其在多相催化和大分子催化反应中有较好的工业应用前景.