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Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition (PLD). Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.  相似文献   
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The dynamics expansion mechanisms for plasma plume generated by pulsed laser radiation are studied in detail, taking account of plasma ionization effect. Based on the consideration of local conservations of mass, momentum, collected as the assumption that plasma can be viewed as compressible ideal fluid and high temperature-high pressure ideal gas, we develop a new dynamics expansion mechanism for plasma produced by pulsed laser radiation. Using the analytical method, the space number density and pressure evolvement of plasma in cylindrical coordinate are obtained, the dynamics evolvement equations are also derived. The results from the present model indicate that the plasma dynamic expansion behaviour can be evidently influenced by the ionization fraction η. Its effect is similar to a new dynamic source for plasma expansion and increases the expansion acceleration in all directions. The predictions of the expansion of the plasma is affected by the temperature, the average atoms mass and the ionization degree of the plasma are consistent with the experimental results.  相似文献   
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We numerical simulate the propagation behaviour and people distribution trait of epidemic spreading in mobile individuals by using cellular automaton method. The simulation results show that there exists a critical value of infected rate fluctuating amplitude, above which the epidemic can spread in whole population. Moreover, with the value of infected rate fluctuating amplitude increasing, the spatial distribution of infected population exhibits the spontaneous formation of irregular spiral waves and convergence phenomena, at the same time, the density of different populations will oscillate automatically with time. What is more, the traits of dynamic grow clearly and stably when the time and the value of infected rate fluctuating amplitude increasing. It is also found that the maximal proportion of infected individuals is independent of the value of fluctuating amplitude rate, but increases linearly with the population density.  相似文献   
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We numerically investigate the quenched random directed sandpile models which are local, conservative and Abelian. A local flow balance between the outflow of grains during a single toppling at a site and the total number of grains flowing into the same site plays an important role when all the nearest-neighbouring sites of the above-mentioned site topple for once. The quenched model has the same critical exponents with the Abelian deterministic directed sandpile model when the local flow balance exists, otherwise the critical exponents of this quenched model and the annealed Abelian random directed sandpile model are the same. These results indicate that the presence or absence of this local flow balance determines the universality class of the Abelian directed sandpile model.  相似文献   
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ZnO-based resistive switching device Ag/ZnO/TiN, and its modified structure Ag/ZnO/Zn/ZnO/TiN and Ag/graphene/ZnO/TiN, were prepared. The effects of inserted Zn layers in ZnO matrix and an interface graphene layer on resistive switching characteristics were studied. It is found that metal ions, oxygen vacancies, and interface are involved in the RS process. A thin inserted Zn layer can increase the resistance of HRS and enhance the resistance ratio. A graphene interface layer between ZnO layer and top electrode can block the carrier transport and enhance the resistance ratio to several times. The results suggest feasible routes to tailor the resistive switching performance of ZnO-based structure.  相似文献   
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