复合多层介质在可变温度和集中荷载作用下的位移和应力

研究了多层介质中的热弹性位移和应力.多层介质具有不同厚度,各层又具有不同的弹性性质,最上层表面上作用热荷载和集中荷载.假设各层分别是均匀、各向同性弹性材料,各层相关的位移分量是轴对称的,对称轴为各层表面的垂线.因此,各层应力函数满足无体力的单一方程.利用积分变换法求解了该方程,对由任意多个层数构造的多层介质,给出了其相应层数基础热弹性位移和应力的解析表达式.并对3层介质和4层介质时的数值结果进行了比较.     

一种新的环糊精衍生物手性固定相的合成及其在对映异构体过量值测定中的应用

 以 β 环糊精为原料 ,合成了一种新的环糊精衍生物 2 ,6 二 O 苄基 3 O 戊酰基 β 环糊精 ,用核磁氢谱和红外光谱对产物进行了表征 ,并将所得环糊精衍生物用作毛细管气相手性固定相制备成柱 ,用于 2 ,4 二氯苯乙酮的不对称催化氢化产物 2 ,4 二氯苯乙醇和反式 2 己烯醇的Sharpless环氧化产物 反式 3 正丙基环氧乙烷甲醇的对映异构体过量值 (e.e .值 )测定和催化反应评价 ,取得了很好的结果。     

混沌光注入半导体激光器中极端事件的演变

基于相位共轭光反馈混沌激光系统(主激光器)产生的极端事件,研究了将其输出注入到一个自由运行的半导体激光器(从激光器)的演化情况.通过注入参数空间中极端事件相对数量的二维统计图分析注入参数对极端事件产生的影响,发现在主从激光器混沌输出高相关性参数区域,从激光器中的极端事件的相对数量趋向于一个接近主激光器中极端事件相对数量的稳定值;在某些特定的弱相关区域,从激光器中的极端事件的相对数量趋向于增加.研究结果证明了通过光注入控制极端事件的可能性,有利于优化混沌激光系统性能或拓展其应用场景.     

MORPHOLOGICAL OBSERVATION OF SINGLE-CHAIN POLY (METHYL METHACRYLATE) PARTICLES*

Tapping mode atomic force microscope has been applied to observe single-chain PMMAparticles which were stored for six months at room temperature after sprayed from verydilute solutions in good solvents, good/poor mixed solvents, and a theta solvent. Monodis-perse PMMA standards of molecular weights ranging from 7.90×10~4 to 1.3×10~6 wereused to investigate the effect of molecular weight oh the size of the single-chain PMMAparticles. These single-chain particles showed close to spherical shapes. The morphologyof single-chain PMMA particles of a given molecular weight was found to be identical inspite of different solvents used for solution spraying. Molecular weigh dependence of theparticle dimension was also found. The diameters of single-chain PMMA particles aftercorrection of tlp-geometry effect were compared to the values estimated from molecularweight and density.     

新能源硅产业硅片切割废砂浆中碳化硅的浮选工艺研究

以煤油做捕收剂,采用泡沫浮选方法回收硅片切割废砂浆的碳化硅.研究了捕收剂浓度、pH值、固液比及粒度对分离效果的影响.结果表明,当捕收剂用量为50 mL ·g-1、pH值为8.3、固液比为3:400 9·mL-1、粒度为8.636μm时,分离效果最佳,此条件下回收的碳化硅纯度为99.08;.     

Phase Transition and EOS of Marmatite （Zn0.76Fe0.23S） up to 623K and 17 GPa

In situ energy dispersive x-ray diffraction for natural marmatite （Zn0.76Fe0.23S） is performed up to 17. 7 GPa and 623 K. It is fit, ted by the Birch-Murnaghan equation of state （EOS） that Ko and α0 for marmatite are 85（3）GPa and 0.79（16）＊10^-4 K^-1, respectively. Fe^2＋ isomorphic replacing to Zn^2＋ in natural crystal is responsible for high bulk modulus and thermal expansivity of marmatite. Temperature derivative of bulk modulus （OK/OT）p for marmatite is fitted to be -0.044（23） GPaK^-1. The unambiguous B3-B1 phase boundaries for marmatite are determined to be Pupper（GPa）= 15.50 - 0.016T（℃） and Plower （GPa）=9.94-0.012T（℃） at 300-623K.     

Electronic Structure of Si1-xⅣx/Si Superlattices on Si （001）

We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si1-xⅣx/Si （x = 0.125, 0.25, 0.5, Ⅳ=Ge, Sn） superlattices （SLs） grown along the [001] direction on bulk Si. The present calculations reveal that the Si0.875Ge0.125/Si, Si0.75Ge0.25/Si and Si0.875Sn0.125/Si are the F-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si1-xⅣx/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.