Width-Dependent Optical Properties for Zigzag-Edge Silicene Nanoribbons

We study theoretically the optical response for perfect zigzag-edge silicene nanoribbons with N silicon atoms of the A and B sublattices(N-ZSiNRs) under the irradiation of an external electromagnetic field at low temperatures.The 8- and 16-ZSiNRs are demonstrated to exhibit a broad energy regime of absorption coefficient, refractive index, extinction coefficient, and reflectivity from infrared to ultraviolet, utilizing the dipole-transition theorem for semiconductors. The optical spectra for 8- and 16-ZSiNRs may be classified into two types of the transitions,one between valence and conduction subbands with the same parity, and the other among the edge state and bulk state subbands. With the increase of the ribbon width, the optical spectra for ZSiNRs are proved to exhibit red shift and blue shift at the lower and higher energy regimes, respectively. The obtained novel features are believed to be of significance in designs of silicene-based optoelectronic devices.     

非共振圆偏振光作用下单层二硫化钼电子结构及其自旋/谷输运性质

基于紧束缚近似下的低能有效哈密顿模型和久保线性响应理论,研究了外部非共振圆偏振光作用下单层二硫化钼(MoS_2)电子结构及其自旋/谷输运性质.研究结果表明:单层MoS_2布里渊区K谷和K′谷附近自旋依赖子带间的能隙随着非共振右旋圆偏振光引起的有效耦合能分别线性增大和先减小后增大,随着非共振左旋圆偏振光引起的有效耦合能分别先减小后增大和线性增大,实现了系统能带结构有趣的半导体-半金属-半导体转变.此外,单层MoS_2在外部非共振圆偏振光作用下,呈现有趣的量子化横向霍尔电导和自旋/谷霍尔电导,自旋极化率在非共振右/左旋圆偏振光有效耦合能±0.79 eV附近达到最大并发生由正到负或由负到正的急剧转变,谷极化率随着非共振圆偏振光有效耦合能先增大后减小并在其绝对值0.79-0.87 eV范围内达到100%.因而,可以利用外部非共振圆偏振光将单层MoS_2调制成自旋/谷以及光电特性优异的新带隙材料.