HC1 270/HC600a的PVTX实验研究

在256-366 K范围内测量了HC1270/HC600a物系9个组成、73组PVTx数据,温度、压力、比容和组成的测量精度分别在±30 mK、±1.4 kPa、+0.18%和±0.33%以内.引入了泡点TVx测量.对两相区实验数据进行了平衡组成推算.     

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

The transport mechanism of reverse surface leakage current in the AlGaN/GaN high-electron mobility transistor(HEMT) becomes one of the most important reliability issues with the downscaling of feature size.In this paper,the research results show that the reverse surface leakage current in AlGaN/GaN HEMT with SiN passivation increases with the enhancement of temperature in the range from 298 K to 423 K.Three possible transport mechanisms are proposed and examined to explain the generation of reverse surface leakage current.By comparing the experimental data with the numerical transport models,it is found that neither Fowler-Nordheim tunneling nor Frenkel-Poole emission can describe the transport of reverse surface leakage current.However,good agreement is found between the experimental data and the two-dimensional variable range hopping(2D-VRH) model.Therefore,it is concluded that the reverse surface leakage current is dominated by the electron hopping through the surface states at the barrier layer.Moreover,the activation energy of surface leakage current is extracted,which is around 0.083 eV.Finally,the SiN passivated HEMT with a high Al composition and a thin AlGaN barrier layer is also studied.It is observed that 2D-VRH still dominates the reverse surface leakage current and the activation energy is around 0.10 eV,which demonstrates that the alteration of the AlGaN barrier layer does not affect the transport mechanism of reverse surface leakage current in this paper.     

有限厚度、大压入的球压试验材料力学响应

针对磁场环境中受机械载荷作用变厚度载流旋转壳体热磁弹性问题,基于薄壳的几何方程、物理方程、运动方程、电动力学方程,建立其热磁弹性基本方程．应用线性化方法,得到了关于热磁弹性问题的线性迭代方程,转化为包括8个基本未知量的标准型方程组．关于载流旋转壳体,给出Lorentz力表达式,导出了温度场及温度场积分特征值．分析了变厚度锥形旋转壳体应力、温度及变形随外加电磁参量的变化规律,并通过数值模拟对理论分析进行了验证．研究结果可为载流旋转壳体热磁弹性问题研究提供理论参考．