采用MOCVD法在p型Si衬底上生长Zn0薄膜

采用金属有机物化学气相沉积(MOCVD)法在p型Si(100)衬底上生长未掺杂的n型ZnO薄膜.在不同的生长温度下,c轴取向ZnO薄膜被生长在Si衬底上,生长所采用的锌源为二乙基锌(DEZn),氧源为氧气(O2).通过X射线衍射(XRD)、光电子能谱(XPS)和荧光光(PL)谱研究了薄膜的结构和光学特性.研究表明温度为610℃时生长的ZnO薄膜显示最好的结构和光学特性.此外,所生长n-ZnO/p-Si异质结的I-V特性曲线都表现明显的整流特性,且反向漏电流很小.在620℃生长的异质结的漏电流相对最大,大于在其它温度下生长的异质结的漏电流.     

Near-Infrared Emission from Organic Light-Emitting Diodes Based on Copper Phthalocyanine with a Periodically Arranged Alq3：CuPc/DCM Multilayer Structure

We demonstrate near-infrared organic light-emitting devices with a periodically arranged tris（8-quinolinolato）aluminum （Alq3）：copper phthalocyanine （CuPc）/4-（dicyanomethylene）-2-methyl-6-（4-dimethylaminost-yry）-4H-pyran （DCM） multilayer structure. DCM and Alq3 doped with CuPc were periodically deposited. Room-temperature electrophosphorescence was observed at about 1.1 μm due to transitions from the first excited triplet state to the singlet ground state （T1 - S0） of CuPc. In this device, we utilize the overlap between the Q band πr - π^＊ at about 625nm of the absorption spectra of CuPc and the PL spectra of the DCM. The near-infrared emission intensity of the CuPc-doped Alq3 device with DCM increases about 2.5 times larger than that of the device without DCM. We attribute the efficiency enhancement to the better overlap between the PL spectra of DCM and the absorption spectra of CuPc.