Distinctive distribution of defects in CdZnTe:In ingots and their effects on the photoelectric properties

Photoelectric properties of CdZnTe:In samples with distinctive defect distributions are investigated using various techniques. Samples cut from the head(T04) and tail(W02) regions of a crystal ingot show distinct differences in Te inclusion distribution. Obvious difference is not observed in Fourier transform infrared(FTIR) spectra, UV–Vis–NIR transmittance spectra, and Ⅰ–Ⅴ measurements. However, carrier mobility of the tip sample is higher than that of the tail according to the laser beam induced current(LBIC) measurements. Low temperature photoluminescence(PL) measurement presents sharp emission peaks of D~0 X and A~0 X, and relatively large peak of D~0 X(or A~0 X)/D_(complexfor) T04, indicating a better crystalline quality. Thermally stimulated current(TSC) spectrum shows higher density of shallow point defects, i.e.,Cd vacancies, In_(Cd)~+, etc., in W02 sample, which could be responsible for the deterioration of electron mobility.