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采用Nd0 .7Sr0 .3MnO3/SrTiO3/YBa2 Cu3O7-δ的异质结构 ,研究了自旋极化准粒子的注入效应 .在 5 6 μm宽的YBCO膜条上成功地制备了与超导膜条同样宽度但不同长度的六个注入结区 ,长度L分别为 80 μm ,4 0 μm ,2 0 μm ,10 μm ,5 μm和 2 μm .80nm厚的YBCO薄膜在 16K温度下Jc 为 2× 10 5A/cm2 .Iin=0 .5mA的自旋电流注入下 ,随L从 80 μm逐渐顺次减小时 ,注入效率 η =ΔJc/ΔJin逐渐增大 .而当L≤ 2 0 μm后 ,η不再增加 ,达到几乎相同的值 (~ 6 ) .初步分析认为这与自旋极化准粒子在超导膜内的有效自旋扩散长度有关 .异质结构中YBCO薄膜的超导电性以及注入窗口的尺寸对获得大的自旋注入效率十分重要 . 相似文献
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Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition 下载免费PDF全文
Mn-doped GaN epitaxial films were grown by metal organic chemical vapour deposition (MOCVD). Microstructural properties of films are investigated using Raman scattering. It is found that with increasing Mn-dopants levels, longitudinal optical phonon mode A1 (LO) of films is broadened and shifted towards lower frequency. This phenomenon possibly derives from the difference in bonding strength between Ga-N pairs and Mn-N pairs in host lattice. In addition, optical properties of films are investigated using cathodoluminescence and absorption spectroscopy. Mn-related both emission band around 3.0eV and absorption bands around 1.5 and 2.95eV are observed. By studies on structural and optical properties of Mn-doped GaN, we find that Mn ions substitute for Ga sites in host lattice. However, carrier-mediated ferromagnetic exchange seems unlikely due to deep levels of Mn acceptors. 相似文献
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Nd-Sr-Mn-O钙态矿锰氧化物的低场磁电阻效应 总被引:4,自引:4,他引:4
采用固相烧结法和脉冲激光沉积法分别制备了钙态矿型锰氧化物Nd1-xSrxMnO3(x=0.1,0.2,0.3,0.4,0.5)大块多晶和Nd0.7Sr0.3MnO3在(100)LaAlO3基片上的单取向薄膜样品,分别研究了这些样品的磁电阻效应。研究表明,在多晶样品中,x=0.3时具有最大的磁电阻比,其值在240K和1T磁场下可达24.2%。对于同一成分的外延薄膜,发现磁电阻随着沉积时基片温度Ts的升高而下降,当Ts=500℃时的制备态薄膜在同样条件下的磁电阻可达84%,随着外加磁场增大到5T,磁电阻将线性增大到275%。并讨论了造成单取向膜和块材磁电阻不同的原因。 相似文献
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Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method 下载免费PDF全文
Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method (MOCVD) Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements. There are no detectable second phases formed during growth and no significant degradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped GaN diluted magnetic semiconductors or nanoscale iron clusters and FeN compounds which we have not detected. 相似文献
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