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This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with
electron (1.5~MeV) at 360~K. Two groups of samples with low [Oi]=6.9× 1017~cm-3 and high [ Oi]=1.06× 1018~cm-3 were used. We found that the
concentration of the VO pairs have different behaviour to the
annealing temperature in different concentration of oxygen specimen,
it is hardly changed in the higher concentration of oxygen specimen. It
was also found that the concentration of VO2 in lower concentration
of oxygen specimen gets to maximum at 450~℃ and then
dissapears at 500~℃, accompanied with the appearing of
VO3. For both kinds of specimens, the concentration of VO3
reachs to maximum at 550~℃ and does not disappear
completely at 600~℃. 相似文献
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