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Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range
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Nonpolar (11■0) plane InxGa1-x N epilayers comprising the entire In content (x) range were successfully grown on nanoscale Ga N islands by metal-organic chemical vapor deposition.The structural and optical properties were studied intensively.It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33,even though the crystalline quality was gradually declined,which was accompanied by the appearance of phase separation in the Inx 相似文献
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