Epitaxial Growth and Characteristics of Nonpolar a-Plane InGaN Films with Blue-Green-Red Emission and Entire In Content Range

Nonpolar （11■0） plane In_xGa_1-x N epilayers comprising the entire In content （x） range were successfully grown on nanoscale Ga N islands by metal-organic chemical vapor deposition.The structural and optical properties were studied intensively.It was found that the surface morphology was gradually smoothed when x increased from 0.06 to 0.33,even though the crystalline quality was gradually declined,which was accompanied by the appearance of phase separation in the In_x