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Influence of applied electric field on the absorption coefficient and subband distances in asymmetrical AlN/GaN coupled double quantum wells
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The influence of applied electric fields on the absorption
coefficient and subband distances in asymmetrical AlN/GaN coupled
double quantum wells (CDQWs) has been investigated by solving
Schr?dinger and Poisson equations self-consistently. It is found
that the absorption coefficient of the intersubband transition
(ISBT) between the ground state and the third excited state (1odd-2even) can be equal to zero when the electric fields
are applied in asymmetrical AlN/GaN CDQWs, which is related to
applied electric fields induced symmetry recovery of these states.
Meanwhile, the energy distances between 1odd-2even
and 1even-2even subbands have different
relationships from each other with the increase of applied electric
fields due to the different polarization-induced potential drops
between the left and the right wells. The results indicate that an
electrical-optical modulator operated within the opto-communication
wavelength range can be realized in spite of the strong
polarization-induced electric fields in asymmetrical AlN/GaN CDQWs. 相似文献
2.
Optimization of a solar-blind and middle infrared two-colour photodetector using GaN-based bulk material and quantum wells
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This paper calculates the wavelengths of the interband
transitions as a function of the Al mole fraction of AlxGa1-xN bulk material. It is finds that when the Al mole fraction is
between 0.456 and 0.639, the wavelengths correspond to the solar-blind
(250~nm to 280~nm). The influence of the structure parameters of
AlyGa1-yN/GaN quantum wells on the wavelength and absorption
coefficient of intersubband transitions has been investigated by
solving the Schr?dinger and Poisson equations self-consistently. The
Al mole fraction of the AlyGa1-yN barrier changes from
0.30 to 0.46, meanwhile the width of the well changes from 2.9~nm to
2.2~nm, for maximal intersubband absorption in the window of the air
(3~μm <λ <5~μm). The absorption coefficient of the
intersubband transition between the ground state and the first
excited state decreases with the increase of the wavelength. The
results are finally used to discuss the prospects of GaN-based bulk
material and quantum wells for a solar-blind and middle infrared
two-colour photodetector. 相似文献
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