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The effects of electron-phonon interaction on energy levels of a polaron in a wurtzite nitride finite parabolic quantum well (PQW) are studied by using a modified Lee-Low-Pines variational method. The ground state, first excited state, and transition energy of the polaron in the GaN/Al0.3Ga0.7N wurtzite PQW are calculated by taking account of the influence of confined LO(TO)-like phonon modes and the half-spaee LO(TO)-like phonon modes and considering the anisotropy of all kinds of phonon modes. The numerical results are given and discussed. The results show that the electron-phonon interaction strongly affects the energy levels of the polaron, and the contributions from phonons to the energy of a polaron in a wurtzite nitride PQW are greater than that in an A1GaAs PQW. This indicates that ehe electron-phonon interaction in a wurtzite nitride PQW is not negligible. 相似文献
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电子横向运动对共振隧穿的影响 总被引:2,自引:0,他引:2
讨论了电子横纵方向运动耦合时的隧穿现象,对CdSe/Zn1-xCdxSe方形双势垒结构和抛物形双势垒结构的数值计算表明,在零偏压和非零偏压情况下,电子横向运动对共振隧穿的影响是不容忽略的。 相似文献
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电子的隧穿时间是描述量子器件动态工作范围的重要指标. 本文考虑k3 Dresselhaus 自旋轨道耦合效应对系统哈密顿量的修正, 结合转移矩阵方法和龙格-库塔法来解含时薛定谔方程, 进而讨论了电子在非磁半导体对称双势垒结构中的透射系数及隧穿寿命等问题. 研究结果发现:由于k3 Dresselhaus 自旋轨道耦合效应使自旋简并消除, 并在时间域内得到了表达, 导致自旋向上和自旋向下电子的透射峰发生了自旋劈裂; 不同自旋取向的电子构建时间和隧穿寿命不同, 这是导致自旋极化的原因之一; 电子的自旋极化在时间上趋于稳定.
关键词:
自旋极化输运
透射系数
隧穿寿命
自旋极化率 相似文献
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在有效质量近似和绝热近似下,利用转移矩阵法研究了电子通过In As/In P/In As/In P/In As柱形量子线共振隧穿二极管的输运问题,分析和讨论了电子居留时间以及电子的逃逸过程.详细研究了外加电场、结构尺寸效应对居留时间和电子逃逸的影响.居留时间随电子纵向能量的演化呈现出共振现象;同时,结构的非对称性对电子居留时间有很大的影响,随着结构非对称性的增加,居留时间表现出不同的变化.利用有限差分方法研究了非对称耦合量子盘中电子的相干隧穿逃逸过程. 相似文献
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Coherent tunnelling is studied in the framework of the effective mass approximation for an asymmetric coupled quantum well. The Hartree potential due to the electron-electron interaction is considered in our calculation. The effects of the longitudinal and transverse magnetic field on coherent tunnelling characteristics are discussed. It has been found that the external field plays an important role in modulating the electron states. 相似文献
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