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The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance 下载免费PDF全文
ZnO micro-prisms are prepared on the p-type and n-type Si substrates,
separately. The $I$--$V$ curves analysed by AFM show that the interface junctions
between the ZnO micro-prisms and the p-type substrate and between the ZnO
micro-prisms and the n-type Si substrate exhibit p--n junction behaviour and
ohmic contact behaviour, respectively. The formation of the p--n
heterojunction and ohmic contact is ascribed to the intrinsic n-type
conduction of ZnO material. Better field emission performance (lower onset
voltage and larger emission current) is observed from an individual ZnO
micro-prism grown on the n-type Si substrate. It is suggested that the
n-Si/n-ZnO interfacial ohmic contact benefits the electron emission; while
the p-Si/n-ZnO interface heterojunction deteriorates the electron emission. 相似文献
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