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Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment 下载免费PDF全文
A nonvolatile memory device with nitrided Si nanocrystals embedded in a floating gate was fabricated. The uniform Si nanocrystals with high density (3× 10^11 cm^-2 ) were deposited on ultra-thin tunnel oxide layer (- 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanoerystals, which slows the charge loss rate. 相似文献
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