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从Ⅲ族氮化物中压电极化对应变弛豫度的依赖关系出发,通过自洽求解薛定谔方程和泊松方程,分别研究了自发极化、压电极化和AlGaN势垒层掺杂对AlxGa1-xN/GaN异质结构二维电子气的浓度、分布、面密度以及子带分布等性质的影响.结果表明:二维电子气性质强烈依赖于极化效应,不考虑AlGaN势垒层掺杂,当Al组分为0.3时,由极化导致的二维电子气浓度达1.6×10--13cm-2,其中压电极化对二维电子气贡献为0.7×10-13cm-2,略小于自发极化的贡献(0.9×10-13cm-2),但为同一数量级,因而通过控制AlGaN层应变而改变极化对于提高二维电子气浓度至关重要. AlGaN势垒层掺杂对二维电子气的影响较弱, 当掺杂浓度从1×10-17增加到1×10-18cm-3时,二维电子气面密度增加0.2×10-13cm-2.
关键词:
AlxGa1-xN/GaN 异质结构
二维电子气
自发极化
压电极化 相似文献
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通过用数值计算方法自洽求解薛定谔方程和泊松方程,研究了Al组分对AlxGa1-xN/GaN异质结构二维电子气性质的影响,给出了AlxGa1-x< /sub>N/GaN异质结构二维电子气分布和面密度,导带能带偏移以及子带中电子分布随AlxGa 1-xN势垒层中Al组分的变化关系,并用AlxGa1-xN/GaN 异质结构自发极化与压电极化机理和能
关键词:
xGa1-xN/GaN异质结构')" href="#">AlxGa1-xN/GaN异质结构
二维电子气
自发极化
压电极化 相似文献
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The unintentionally doped samples of Al0.22Ga0.78N/GaN/Al0.22Ga0.78N/GaN multi-heterostructures have been designed and fabricated. The polarization induced charge and free-carrier charge distributions have been demonstrated and the energy band profile has also been calculated. The results indicate the existence of two-dimensional 相似文献
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Ⅲ族氮化物异质结构二维电子气研究进展 总被引:1,自引:0,他引:1
本文总结了近年来Ⅲ族氮化物半导体异质结构二维电子气的研究进展。从Ⅲ族氮化物材料晶格结构和特有的极化性质出发,重点讨论了AlGaN/GaN异质结构中二维电子气的性质,总结分析了异质结构中Al组分、势垒层厚度、应变弛豫度、掺杂等对二维电子气浓度和迁移率的影响,同时还涉及AlGaN/GaN/AlGaN,AlGaN/AlN/GaN和AlGaN/InGaN/GaN等异质结构二维电子气性质。 相似文献
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We investigate the influence of fin architecture on linearity characteristics of AlGaN/GaNFinFET.It is found that the Fin FET with scaled fin dimensions exhibits much flatter G_m characteristics than the one with long fins as well as planar HEMT.According to the comparative study,we provide direct proof that source resistance rather than tri-gate structure itself dominates the G_m behavior.Furthermore,power measurements show that the optimized FinFET is capable of delivering a much higher output power density along with significant improvement in linearity characteristics than conventional planar HEMT.This study also highlights the importance of fin design in GaN-based FinFET for microwave power application,especially high-linearity applications. 相似文献
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利用Al_AlN_Si(111) MIS结构电容_频率谱研究了金属有机化学气相沉积法生长的 Si 基AlN的AlN_Si异质结构中的电荷陷阱态. 揭示了AlN_Si异质结构界面电荷陷阱态以及A lN层中的分立陷阱中心. 结果指出:AlN层中存在E_t-E_v=2.55eV的分立陷阱中心;AlN_Si界面陷阱态在Si能隙范围内呈连续分布,带中央态密度最低,N_ss为8×10^11eV^-1cm^-2,对应的时间常数τ为8×10^-4s ,俘获截面σn为1.58×10^-14cm^2;在AlN界面层存在三种陷阱 态,导致Al_AlN_Si异质结构积累区电容的频散.
关键词:
界面陷阱态
AlN-Si
电容-频率谱 相似文献
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In this Letter, we reported the preliminary results of an integrating periodically capacitive-loaded traveling wave electrode(CL-TWE) Mach–Zehnder modulator(MZM) based on InP-based multiple quantum well(MQW)optical waveguides. The device configuration mainly includes an optical Mach–Zehnder interferometer, a direct current electrode, two phase electrodes, and a CL-TWE consisting of a U electrode and an I electrode. The modulator was fabricated on a 3 in. InP epitaxial wafer by standard photolithography, inductively coupled plasma dry etching, wet etching, electroplating, etc. Measurement results show that the MZM exhibits a3 dB electro-optic bandwidth of about 31 GHz, a V_π of 3 V, and an extinction ratio of about 20 dB. 相似文献
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