Modeling,simulations,and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes

With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are simulated.The simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N SBD.Also,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition layer.The simulations show that the device still has good properties after adding this layer.     

A Novel Oxygen-Based Digital Etching Technique for p-GaN/AlGaN Structures without Etch-Stop Layers

A novel O₂ plasma-based digital etching technology for p-GaN/AlGaN structures without any etch-stop layer was investigated using an inductively coupled plasma(ICP) etcher,with 100 W ICP power and 40 W rf bias power.Under 40 sccm O₂ flow and 3 min oxidation time,the p-GaN etch depth was 3.62 nm per circle.The surface roughness improved from 0.499 to 0.452 nm after digital etching,meaning that no observable damages were caused by this process.Compared to the dry etch only met...