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直流磁控溅射沉积含He钛膜的研究 总被引:1,自引:0,他引:1
研究了用He/Ar混合溅射气体的直流磁控溅射制备钛膜中,He的掺入现象.分析结果表明,大量的He原子(He/Ti原子比高达56%)被均匀地引入到Ti膜中,其He含量可由混合溅射气体的He分量精确控制.通过调节溅射参数,可实现样品中He的低损伤引入.研究还发现,溅射沉积的含氦Ti膜具有较高的He成泡剂量和高的固He能力,这可能是溅射沉积形成了纳米晶Ti膜所致.纳米晶Ti膜较粗晶材料具有很高浓度的He捕陷中心,使He泡密度增大而泡尺寸减小.随He引入量的增加,Ti膜的晶粒尺寸减小,He引起的晶体点阵参数和X射线衍射峰宽度增大,晶体的无序程度增加.Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%)incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage(or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retain He in sputtering Ti films is much higher than that in the coarse grain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With the increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase. 相似文献
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将能量为1.5MeV,剂量分别为1.5×1015cm-2和7.5×1015cm-2的磷离子注入<100>硅单晶,经1050℃,20s退火形成导电埋层,在500—4000cm-1波数范围的红外反射谱中,观测到由自由载流子等离子体效应所致的干涉现象,在分析高能离子注入体系和自由载流子等离子体效应光学响应的特征基础上,通过计算机模拟红外反射谱,建立了深导电埋层的光学表征方法,应用这种表征方法,获得了导电埋层中的载流子分布、迁移率和高能注入离子的电激活率,模拟计算结果表明红外反射谱对载流子分布形状和模型中参量是敏感的,模拟计算的准确程度是高的,进行了模拟计算的结果与实验结果的比较。 相似文献
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Annealing Behaviour of Helium Bubbles in Titanium Films by Thermal Desorption Spectroscopy and Positron Beam Analysis 总被引:1,自引:0,他引:1
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Helium-containing Ti Glms are prepared using magnetron sputtering in the helium-argon atmosphere. Isochronal annealing at different temperatures for an hour is employed to reveal the behaviour of helium bubble growth. Ion beam analysis is used to measure the retained helium content. Helium can release largely when annealing above 970K. A thermal helium desorption spectroscopy system is constructed for assessment of the evolution of helium bubbles in the annealed samples by linear heating (OAK/s) from room temperature to 1500K. Also, Doppler broadening measurements of positron annihilation radiation spectrum are performed by using changeable energy positron beam. Bubble coarsening evolves gradually below 680K, migration and coalescence of small bubbles dominates in the range of 68-970 K, and the Ostwald ripening mechanism enlarges the bubbles with a massive release above 970K. 相似文献
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介绍了将离子枪组合于卢瑟福背散射分析靶室中构成Sputtering/RBS原位分析实验装置,用低能离子溅射剥层与高能离子背散射组合对薄膜样品进行成分和深埋层分析方法.给出了对样品分析的三个例子.对Au/Si样品的分析着重讨论了Au在Ar+溅射剥层时的溅射速率;对Si/Ge Si/Si和WSix/SiO2/Si样品的深埋层分析,提高了样品分析的深度分辨率.讨论了这一Sputtering/RBS组合分析方法的优缺点和在薄膜材料研究中可能的应用
关键词: 相似文献
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用Monte Carlo方法模拟了高速He+离子入射到C,Cu和Al固体表面所诱发的电子发射.用这个程序计算了背向的电子发射产额,并且同时计算了近程碰撞对总的背向电子发射产额的贡献比例,对C,Cu和Al其值分别是05,055和0.42.对在近程碰撞中产生的高能δ电子(E>10O eV)对背向电子发射行为的影响也进行了详尽地讨论,只有那些能量为几百个eV的δ电子对产额的贡献比例较大.对于C靶,δ电子对电子阻止本领最大值附近的二次电子发射行为会产生影响.计算所得到的电子发射产额与实验结果符合得很好.
关键词:
二次电子发射
Monte Carlo模拟
近程碰撞
δ电子 相似文献
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