气源MBE外延自组装GeSi量子点光致荧光研究

利用气源分子束外延设备（MBE）制作了GeSi自组装量子点样品。利用原子力显微镜（AFM）和光致荧光（PL）光谱研究了量子点的形貌和光学性质。气源MBE在较低温度下生长的量子点材料具有较高的量子点覆盖度。200K以下载流子以局域激子形式束缚在量子点中,激子束缚能约为17meV。升温至200K,载流子的输运过程发生变化。对量子点PL积分强度与温度关系曲线进行拟合得到量子点中空穴跃迁至浸润层的热激活能为129meV。     

基于光纤布拉格光栅的智能服装人体测温模型研究

根据热量传递机理建立了智能服装中光纤布拉格光栅人体测温的热传递物理模型,对人体、空气层和服装之间的热传递进行了有限元建模和稳态热分析,确定了智能服装中光纤布拉格光栅温度场的数学模型,利用该数学模型对光纤布拉格光栅测量温度值进行了修正.在多点加权皮肤平均温度的基础上,提出了由左右胸、左右腋和后背五处皮肤温度构成的智能服装...     

光子晶体垂直腔面发射850nm波长激光器研究

文章报道了国内首次研制成功的光子晶体垂直腔面发射850nm波长激光器, 实现了连续电注入激射.发现器件能否激射直接依赖于光子晶体结构参数,而激光器的阈值、输出功率、输出模式等与光子晶体的晶格常数、占空比、腔的大小等因素有关.     

表面人工低维结构的功能设计与构造

可控地构造具有一定功能的表面人工低维结构,并且总结、理解体系微观结构对其宏观性质影响的一般规律,不仅对探索低维基本物理以及其中的新奇量子现象至关重要,更是微电子工业保持持续发展的关键前提.这方面的研究包括发展新的生长技术实现对体系形成过程的精确控制,对获得的材料做高分辨率的表征;从理论上则要理解体系的生长过程,阐明热力学、动力学的作用机理,从而指导制备技术的发展.深入研究表面人工低维结构的性质更可能导致新物理现象与原理的发现,产生全新的器件概念,进一步反馈给体系功能的设计,推动基础研究与应用探索的发展.文章简要介绍了表面物理国家重点实验室近年来在表面人工低维结构的功能设计与构造方面的研究成果     

Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography

We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm,and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.     

界面生长中断对GaAs (111)衬底上AlGaAs/GaAs量子阱电子自旋寿命的影响

用固源分子束外延技术(SSMBE)在GaAs(111)衬底上,采用不同的界面中断时间生长了多组AlGaAs/GaAs多量子阱样品(MQWs),通过室温发光光谱和时间分辨克尔旋转谱(TRKR)研究了界面生长中断对发光光谱半峰全宽(FWHM)和量子阱中电子自旋弛豫时间(自旋寿命)的影响,发现了自旋寿命随着界面生长中断时间的增加呈现先减小后增加的趋势,此变化趋势与荧光光谱半峰全宽表征的材料质量随中断时间的变化一致,适当的界面生长中断时间能有效的增加GaAs (111)衬底上AlGaAs/GaAs 多量子阱中电子自旋寿命。     

Fabrication of VO_2 thin film by rapid thermal annealing in oxygen atmosphere and its metal–insulator phase transition properties

Vanadium dioxide thin films have been fabricated through sputtering vanadium thin films and rapid thermal annealing in oxygen. The microstructure and the metal–insulator transition properties of the vanadium dioxide thin films were investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and a spectrometer. It is found that the preferred orientation of the vanadium dioxide changes from(1ˉ11) to(011) with increasing thickness of the vanadium thin film after rapid thermal annealing. The vanadium dioxide thin films exhibit an obvious metal–insulator transition with increasing temperature, and the phase transition temperature decreases as the film thickness increases. The transition shows hysteretic behaviors, and the hysteresis width decreases as the film thickness increases due to the higher concentration carriers resulted from the uncompleted lattice. The fabrication of vanadium dioxide thin films with higher concentration carriers will facilitate the nature study of the metal–insulator transition.     

Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes

In this study, the influence of multiple interruptions with trimethylindium(TMIn)-treatment in InGaN/GaN multiple quantum wells(MQWs) on green light-emitting diode(LED) is investigated. A comparison of conventional LEDs with the one fabricated with our method shows that the latter has better optical properties. Photoluminescence(PL) full-width at half maximum(FWHM) is reduced, light output power is much higher and the blue shift of electroluminescence(EL) dominant wavelength becomes smaller with current increasing. These improvements should be attributed to the reduced interface roughness of MQW and more uniformity of indium distribution in MQWs by the interruptions with TMIn-treatment.     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

基于排队的库存服务系统最优控制策略

研究一个连续盘点的(s,Q)补货的库存服务系统。基于排队理论建立库存水平状态平衡方程,并推导出库存水平稳态概率分布以及作为库存控制的系统稳态性能指标。以库存成本最小化为目标,构建服务水平约束的库存控制模型。针对模型的非线性约束与整数型变量的特征,采用一种改进的遗传算法(IGA)用于决策变量的寻优。数值实验表明,当目标服务水平大于库存系统内生的服务水平时,实施服务水平约束能够降低库存控制成本。