排序方式: 共有4条查询结果,搜索用时 0 毫秒
1
1.
Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB
下载免费PDF全文
![点击此处可从《中国物理 B》网站下载免费的PDF全文](/ch/ext_images/free.gif)
We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes (CMQD-SLDs) with and without direct Si doping in QDs. It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs. The output power and spectral width have been increased by approximately 18.3% and 40%, respectively. Moreover, we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm. In addition, the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm, respectively, through anti-reflection coating and device packaging. The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest. The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs, optimization of device structure and device packaging. 相似文献
2.
We present an arrayed waveguide grating multi-wavelength laser (MWL). The device is operated with five wave- length channels of 194 GHz spacing around a central wavelength of 1.57μm. A side mode suppression ratio of better than 35 dB for all channels is demonstrated. A very attractive feature of the MWL is that it has been realized by a novel one step regrowth approach to achieve a high quality active and passive interface. 相似文献
3.
A GaAs based high power distributed feedback (DFB) semiconductor laser with a second-order grating has been demonstrated. An output power of 150row at an injection current of 350mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable single longitudinal mode around 106Ohm with a side mode suppression ratio of larger than 50dB. 相似文献
4.
1