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We use scanning tunneling microscopy to study the temperature evolution of electronic structure in Ca3Cu2O4Cl2 parent Mott insulator of cuprates. It is found that the upper Hubbard band moves towards the Fermi energy with increasing temperature, while the charge transfer band remains basically unchanged. This leads to a reduction of the charge transfer gap size at high temperatures, and the rate of reduction is much faster than that of conventional sem... 相似文献
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The electronic evolution of Mott insulators into exotic correlated phases remains puzzling, because of electron interaction and inhomogeneity. Introduction of individual imperfections in Mott insulators could help capture the main mechanism and serve as a basis to understand the evolution. Here we utilize scanning tunneling microscopy to probe the atomic scale electronic structure of the spin-orbit-coupling assisted Mott insulator Sr3Ir2O7. It is found that the t... 相似文献
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