三波长-分光光度法测定黑沙蒿中的总黄酮

以野樱素为对照品、 AlCl3作显色剂,建立了三波长-分光光度法测定黑沙蒿中主要化学成分黄酮类化合物的方法.该方法可校正混浊背景倾斜度的影响,并能消除重叠吸收曲线的干扰.方法的线性范围为1.12～13.44 μg/mL,相关系数r=0.9999,适用于植物中总黄酮的测定.     

聚乙炔的CH面外振动红外光谱研究

采用从头计算方法，计算了反式和顺式聚乙炔的氢原子在垂直于聚乙炔分子面方向振动的红外光谱，计算表明，Gibson等用红外吸收实验所测得的谱线的确是聚乙炔的CH面外振动产生的谱线，经100℃长时间加热后，顺式聚乙炔变为反式聚炔，但波数为740cm^-1的谱级仍保留5％的强度。     

ANALYSIS OF THE X-RAY PHOTOELECTRON SPECTRA OF a-SiOCF FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION

The preparation of a-SiOCF films from Si(OC₂H₅)₄, C₄F₈ and/or Ar using the plasma-enhanced chemical vapour deposition method is reported. The chemical bonding structures of the films are analysed by x-ray photoelectron spectroscopy (XPS). In the case of the films deposited from the mixture with and without Ar, the configurations of F-Si-O-Si, Si-OH, Si-O-Si, C-CF and C-F are contained. However, there is also the C-C configuration in the film prepared from the mixture with Ar. Moreover, it is found that the photoelectron peaks of Si 2p, O 1s and F 1s for the film deposited from the feeding gas with Ar show the same shift of about 1eV toward high binding energy in comparison with those for the film prepared from the feeding gas without Ar. No evidence reveals the presence of an Si-C bond in the films.     

复杂背景下红外弱小目标检测算法研究

复杂背景下低信噪比弱小目标的检测是红外预警系统中的重点和难点。为解决红外图像中杂波干扰多、目标信噪比低等问题,提出一种非线性空间滤波的目标检测方法。该算法在传统线性空间滤波算法的基础上,通过对预测点周围4个象限的背景灰度值进行计算,并动态地调节阈值,以达到突出小目标的目的。试验结果表明:当背景包含较多复杂因素时,采用非线性空间滤波的检测方法可有效地抑制杂波,实现弱小目标的提取,与线性滤波算法结果相比较,虚警数降低了3/4,且易于工程实现。     

Optimization of High-Order Harmonic by Genetic Algorithm for the Chirp and Phase of Few-Cycle Pulses

The brightness of a particular harmonic order is optimized for the chirp and initial phase of the laser pulse by genetic algorithm. The influences of the chirp and initial phase of the excitation pulse on the harmonic spectra are discussed in terms of the semi-classical model including the propagation effects. The results indicate that the harmonic intensity and cutoff have strong dependence on the chirp of the laser pulse, but slightly on its initial phase. The high-order harmonics can be enhanced by the optimal laser pulse and its cutoff can be tuned by optimization of the chirp and initial phase of the laser pulse.     

水流吸收型高能激光能量计溯源方法及其溯源体系研究

提出了一种利用电加热丝作为校准源的高能激光能量计校准方法,将水流从吸收腔前端导入至加热容器,在加热后流入吸收腔。通过精确计量水流吸收的热能并与能量计测量结果进行比较,达到对高能激光能量计校准的目的。研究表明校准系统的热交换模型与吸收腔内的热交换模型一致,均经历了储能和功率平衡两个阶段。水流及相变气体的散射效应对测量结果的影响较小,经过修正后可以忽略其影响。通过深入分析各个环节的测量不确定度表明,残留能量和流量变化对测量不确定度的影响最显著,增加水箱的容积可以有效降低残留能量对测量不确定度的影响。在对各个环节的影响修正后估算出系统的测量不确定度约为4.8%(k=2),被校高能激光能量计校准后的测量结果与其他类型的参考高能激光能量计进行比对,两者具有很好的一致性,修正因子仅为1.006,标准偏差为1.4%。     

折叠式角锥棱镜谐振腔的偏振特性理论与实验研究

建立了角锥棱镜的偏振模型,分析了角锥棱镜对入射线偏振光的偏振态的影响,分析表明角锥棱镜的单个入射区域存在特殊的偏振方向,该方向的线偏振光被角锥棱镜反射后仍然是线偏振光。利用角锥棱镜的该特性设计了腔内存在线偏振光振荡的角锥棱镜激光谐振腔,能够使用电光开关调Q,在振动环境中具有较好的抗失调稳定性。研制了激光器样机并进行了实验,在重复频率为10 Hz时,输出激光单脉冲能量大于300 mJ,光束质量因子β值在2左右,实验结果也表明角锥棱镜的棱和顶点并不影响输出激光的光束质量。     

四角晶相HfO2(001)表面原子和电子结构研究

采用基于第一性原理的密度泛函理论研究了四角晶相二氧化铪(t-HfO₂)体相及 其(001)表面的原子几何与电子结构.理论计算结果表明，t-HfO₂(001)表面不会 产生重构现象.与体相电子结构相比, t-HfO₂(001)表面态密度明显高于体相态 密度.其次，表面原子的态密度更靠近费米能级(E_F)，价带往低能量处移动，并 有表面态产生.计算结果表明了t-HfO₂表面禁带宽度明显低于体相的禁带宽度. t-HfO₂(001)的表面态产生以及表面禁带宽度减小是由于Hf原子与O原子的配位 数减少，表面原子周围的环境发生变化而引起的. 关键词： 密度泛函理论 2(001)')" href="#">t-HfO₂(001) 表面电子结构     

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.     

Effect of N2 Plasma Annealing of Properties of Fluoring Doped Silicon Dioxide Films with Low Dielectric Constant for Ultra—Large—Scale Integrated Circuits

The influence of N2 plasma annealing on the properties of fluorine doped silicon oxide (SiOF) films is investigated.The stability of the Dielectric constant of SiOF film is remarkably improved by the N2 plasma annealing.After enduring a moisture absorption test for six hours in a chamber with 60% humidity at 50℃,the dielectric constant variation of the annealed SiOF films is only 1.5%,while the variation for those SiOF films without annealing is 15.5%.Fourier transform infrared spectroscopic results show that the absorption peaks of Si-OH and H-OH of SiOF films are reduced after the N2 plasma annealing because the annealing can wipe off some unstable Si-F2 bonds in SiOF films.These Unstable Si-F2 bonds are suitable to react with water,resulting in the degradation of SiOF film properties.Therefore,the N2 plasma annealing meliorates the properties of SiOF films with low dielectric constant.