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For an n-type transistor, with copper and phosphor-bronze whiskers respectively for its emitter and collector, as the result of electrical forming, the emitter should have a metal-p-n structure. In the first part of this paper, the forward characteristics of such a structure is analized for the whole range of current, with special reference to the variation of the emission ratio γ with the current. The design requirement of a flat γ-Ie curve is discussed. The second part of the paper contains an analysis of current amplification of the collector. The structure assumed is a metal-p-n junction, the diffusion of phosphorus into the structure causing a high barrier for holes at the metal contact. By combining the result of the two parts, a resultant a-Ie, relation is calculated for a typical case. The main factors affecting the performance of the transistor and means of its improvement are discussed in some detail. 相似文献
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用NMR法研究了顺二氨二水合铂(Ⅱ)(AAP)与α-二棕搁酸磷脂酰胆碱(DPPC)的相互作用方式,以阐明在顺铂-细胞相互作用中膜磷脂的贡献。1H及13C谱表明,DPPC与AAP在CDCl3中作用时,铂结合在DPPC的头部并引起DPPC分子中gauche向trans的构象转变。65℃测定DPPC脂质体与AAP在D2O溶液中反应不同时间后的-N(CH3)3、-(CH2)n及-CH3基团1H的T1值表明,铂在磷脂上的结合引起的磷脂构象变化会导致膜分子重新装配。 相似文献
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