A STUDY OF THE CRYSTALLIZATION OF AMORPHOUS Cu60Zr40 ALLOY

The crystallization of the amorphous Cu₆₀Zr₄₀ alloy has been studied by differential scanning calorimetry (DSC), scanning Auger microprobe (SAM) and transmission electron microscopy (TEM). The DSC trace showed that the sample exhibited a glass transition at 750 K and a strong exothermic effect beginning from 782 K. An enrichment of the element Zr and significant oxygen contamination in a zone near the surface to a depth of about 10 nm were revealed by SAM in the analysis of surface competition and depth profiles of the Cu₆₀Zr₄₀ sample. Also, the change of concentration ratio of Ca to Zr in amorphous matrix at the clean Cu₆₀Zr₄₀ surface as a function of annealing temperature was examined in detail, and it was found that the concentration of Zr at the surface is slightly higher than that in the bulk until 780K and that the concentration ratio of Cu to Zr in matrix has an abrupt increase in the temperature range of 780-800K. The observations by high resolution TEM revealed the appearance of cluster-like regions of approximately 1.5-2.0 nm in size just before crystallization and they distributed randomly throughout the sample. This phenomenon is analogous to the results obtained using field ion microscopy (FIM) by the present authors. The microstructural changes of the sample daring heating show the gradual crystallization of the amorphous matrix.     

A STUDY OF THE CRYSTALLIZATION OF AMORPHOUS Cu60Zr40 ALLOY

The crystallization of the amorphous Cu₆₀Zr₄₀ alloy has been studied by differential scanning calorimetry (DSC), scanning Auger microprobe (SAM) and transmission electron microscopy (TEM). The DSC trace showed that the sample exhibited a glass transition at 750 K and a strong exothermic effect beginning from 782 K. An enrichment of the element Zr and significant oxygen contamination in a zone near the surface to a depth of about 10 nm were revealed by SAM in the analysis of surface competition and depth profiles of the Cu₆₀Zr₄₀ sample. Also, the change of concentration ratio of Ca to Zr in amorphous matrix at the clean Cu₆₀Zr₄₀ surface as a function of annealing temperature was examined in detail, and it was found that the concentration of Zr at the surface is slightly higher than that in the bulk until 780K and that the concentration ratio of Cu to Zr in matrix has an abrupt increase in the temperature range of 780-800K. The observations by high resolution TEM revealed the appearance of cluster-like regions of approximately 1.5-2.0 nm in size just before crystallization and they distributed randomly throughout the sample. This phenomenon is analogous to the results obtained using field ion microscopy (FIM) by the present authors. The microstructural changes of the sample daring heating show the gradual crystallization of the amorphous matrix.     

ELECTRONIC STRUCTURE STUDIES OF THE C60 FILM CONDENSED ON 2H-MoS2(0001) SURFACE

The electronic structure and vibrational spectrum of the C₆₀ film condensed on a 2H- MoS₂(0001) surface have been investigated by X-ray photoelectron spectroscopy (XPS), ul-traviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES) and infrared high-resolution electron-energy-loss spectroscopy (HREELS). AES analysis showed that at low energy side of the main transition, C₆₀ contains a total of three peaks just like that of graphite. However, the energy position of the KLL main Auger transition of C₆₀ looks like that of diamond, indicating that the hybridization of the carbon atoms in C₆₀ is not strictly in sp²- bonded state but that the curvature of the molecular surface introduces some sp²pz- bonded character into the molecular orbitals. XPS showed that the C 1s binding energy in C₆₀ was 285.0eV, and its main line was very symmetric and offered no indication of more than a single carbon species. In UPS measurement the valence band spectrum of C₆₀ within 10eV below the Fermi level (E_F) shows a very distinct five-band structure that character-izes the electronic structure of the C₆₀ molecule. HREEL results showed that the spectrum obtained from the C₆₀ film has very rich vibrational structure. At least, four distinct main loss peaks can be identified below 200 meV. The most intense loss was recorded at 66 meV, and relatively less intense losses were recorded at 95, 164 and 197meV at a primary energy of electron beam E_P = 2.0eV. The other energy-loss peaks at 46, 136, 157 and 186meV in HREEL spectrum are rather weak. These results have been compared to infrared spectrum data of the crystalline solid C₆₀ taken from recent literatures.     

ELECTRONIC STRUCTURE STUDIES OF THE C60 FILM CONDENSED ON 2H-MoS2(0001) SURFACE

The electronic structure and vibrational spectrum of the C₆₀ film condensed on a 2H- MoS₂(0001) surface have been investigated by X-ray photoelectron spectroscopy (XPS), ul-traviolet photoelectron spectroscopy (UPS), Auger electron spectroscopy (AES) and infrared high-resolution electron-energy-loss spectroscopy (HREELS). AES analysis showed that at low energy side of the main transition, C₆₀ contains a total of three peaks just like that of graphite. However, the energy position of the KLL main Auger transition of C₆₀ looks like that of diamond, indicating that the hybridization of the carbon atoms in C₆₀ is not strictly in sp²- bonded state but that the curvature of the molecular surface introduces some sp²pz- bonded character into the molecular orbitals. XPS showed that the C 1s binding energy in C₆₀ was 285.0eV, and its main line was very symmetric and offered no indication of more than a single carbon species. In UPS measurement the valence band spectrum of C₆₀ within 10eV below the Fermi level (E_F) shows a very distinct five-band structure that character-izes the electronic structure of the C₆₀ molecule. HREEL results showed that the spectrum obtained from the C₆₀ film has very rich vibrational structure. At least, four distinct main loss peaks can be identified below 200 meV. The most intense loss was recorded at 66 meV, and relatively less intense losses were recorded at 95, 164 and 197meV at a primary energy of electron beam E_P = 2.0eV. The other energy-loss peaks at 46, 136, 157 and 186meV in HREEL spectrum are rather weak. These results have been compared to infrared spectrum data of the crystalline solid C₆₀ taken from recent literatures.     

Ti/AIN陶瓷界面反应的光电子能谱研究

用X射线光电子能谱(XPS)研究了在室温和超高真空条件下金属Ti淀积在AlN陶瓷表面上的化学反应过程.在金属Ti淀积之前,从AlN陶瓷的能谱中的Ols和Al2P的结合能可以看到因是样品的主要杂质,而且样品表面部分的Al被氧化.当样品淀积了金属Ti以后,发现刚淀积上去的Ti是氧化状态,还发现在Ti淀积的同时则Nls在高结合能处(402和406eV)出现新峰.随着Ti淀积厚度的增加,Ti低结合能的成份在增加而Al的氧化成份逐渐增加,Nls高结合能处的峰(402和406eV)也逐渐增高,更进一步成为主导地.N在 关键词：