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设计了一种基于全固态MOSFET半导体开关器件的Marx脉冲发生器。充电回路用快恢复二极管代替充电电阻,减小了充电部分功率损耗;将主电路和驱动电路集成在一起,采用自取电模式给驱动电路供电;由光纤传输驱动信号,抑制了放电回路对触发信号的干扰;采用顺/逆时针方向环形分布的紧凑型拓扑结构,不仅减小了回路电感,而且实现了脉冲发生器的小型化与模块化。所设计的Marx发生器充电部分仅需提供900 V低压,用180级单元串联,获得最高幅值为150 kV、脉宽1~5 s可调的高压快脉冲,前沿控制在500 ns以内。利用该脉冲发生器在50 k电阻和5 pF电容并联的等效负载上进行了一系列实验;比较分析了脉冲发生器工作过程中影响脉冲上升沿的几个主要因素,包括回路电感、MOSFET驱动电压及主回路分布电容等,并讨论了提升脉冲前沿的技术措施。 相似文献
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Minimization of energy consumed in plasma generation is critical for applications, in which a large volume of plasmas is needed. We suggest that a high electron density atmospheric pressure plasmas can be generated by pulsed discharges in potassium seeded argon at an elevated temperature with a very small power input. The ionization efficiency and power budget of pulsed discharges in such plasmas are analytically studied. The results show that ionization efficiency of argon, especially at small reduced electric field E/N (the ratio of the electric field to the gas number density), is improved effectively in the presence of small amount of potassium additives. Power input of pulsed discharge to sustain a prescribed average level of ionization in potassium seeded argon is three orders of magnitude lower than that in pure argon. Further, unlike in pure argon, it is found that very short high-voltage pulses with very high repetition rates are unnecessary in potassium seeded argon. A pulse with lOOns of pulse duration, 5kHz of repetition rate, and 2Td (1 Td = 1 × 10^-21 Vm^2) of E/N is enough to sustain an electron density of 10^19 m^-3 in 1 arm 1500K Ar+0.1% K mixture, with a very small power input of about 0.08 × 10^4 W/m^3. 相似文献
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为了实现在大气压下低触发电压的多通道放电,以阵列微孔阴极结构作为触发装置设计了一种新型纳秒脉冲开关。以激光打孔的双面环氧板为阵列微孔阴极,研究了开关工作系数、微孔阴极放电电流、微孔阴极孔数及微孔阴极孔径对开关触发电压、延迟和抖动时间的影响。实验结果表明:更多的阵列微孔、100 m的微孔孔径能够降低开关的触发电压,同时高开关工作系数、大触发电流、多阵列微孔能够减少开关的延迟和抖动时间。因此,为了获得更高性能的纳秒脉冲开关,除了对开关结构的进一步改善,这几个影响开关性能的因素是设计开关时应主要考虑的。 相似文献
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提出在典型一阶磁脉冲压缩电路的基础上,测取磁芯在实际工作条件下的动态磁滞回线和饱和磁导率等磁参数,再根据所获得的动态参数指导磁开关设计,进行一阶磁压缩实验。实验选取国内外被广泛应用的非晶磁芯和纳米晶磁芯进行测试,根据实测动态磁参数设计磁开关。实测结果表明:用国产非晶磁芯做磁开关可得到上升沿73 ns、电压幅值28.3 kV、半高宽为503 ns的脉冲,用日本产的纳米晶磁芯做磁开关可得到上升沿30 ns、电压幅值28.4 kV、半高宽为193 ns的脉冲。 相似文献
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