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Nanodot arrays were formed on Si(110) surface under normal-incident Ar ion sputtering at substrate temperature of 800℃ The ion flux was 20μA/cm^2, and the ion energies were 1-5keV. The surface was imaged by an atomic force microscope (AFM). It was found that with the increasing ion energy, the average e11ipticity of the dots changes in an oscillating manner; meanwhile the average dot size increases monotonously. Based on a dynamic continuum model, and taking into consideration the asymmetry of the Ehrlich-Schwoebel diffusions along the(100) and (110) crystallographic directions, we carry out the simulations, which reproduce the experimental results qualitatively. 相似文献
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本文研究了离子能量为1.5keV、束流密度为20?A/cm2正入射Ar+离子束溅射致Si(110)表面形貌随样品温度变化的演化过程。在温度自室温上升至 800?C的过程中, Si(110) 的表面形貌由不规则的纳米点和纳米孔图案变为密集的量子点阵列,同时表面粗糙度也随温度上升不断增加。被通常采用的 Bradley-Harper 模型无法解释上述实验数据。 在考虑溅射过程中存在Ehrlich-Schwoebel 效应后, 进行了已连续动态模型为基础的理论模拟,模拟工作很好的重复了实验结果。 相似文献
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