Structural,electronic,and magnetic properties of transition-metal atom adsorbed two-dimensional GaAs nanosheet

By using first-principles calculations within the framework of density functional theory,the electronic and magnetic properties of 3d transitional metal(TM) atoms(from Sc to Zn) adsorbed monolayer Ga As nanosheets(Ga As NSs) are systematically investigated.Upon TM atom adsorption,Ga As NS,which is a nonmagnetic semiconductor,can be tuned into a magnetic semiconductor(Sc,V,and Fe adsorption),a half-metal(Mn adsorption),or a metal(Co and Cu adsorption).Our calculations show that the strong p–d hybridization between the 3d orbit of TM atoms and the 4p orbit of neighboring As atoms is responsible for the formation of chemical bonds and the origin of magnetism in the Ga As NSs with Sc,V,and Fe adsorption.However,the Mn 3d orbit with more unpaired electrons hybridizes not only with the As 4p orbit but also with the Ga 4p orbit,resulting in a stronger exchange interaction.Our results may be useful for electronic and magnetic applications of Ga As NS-based materials.     

一种晶体表面水平纳米线生长机理的蒙特卡罗模拟研究

采用动力学蒙特卡罗方法模拟,发现在较低过饱和度流体中对称性破缺的简单立方晶体光滑（001）表面上基于晶核的水平纳米线的生长机理．在此基础上,进一步研究了各向异性的表面上经向和纬向热粗糙度对纳米线形貌的影响,分析了纳米线的生长随时间的变化,并系统讨论了纳米线生长速率与表面经向和纬向热粗糙度、过饱和度、晶面尺寸以及表面扩散作用的依赖关系．     

Uniaxial strain-dependent magnetic and electronic properties of (Ga,Mn)As nanowires

Variations in magnetic and electronic properties as a function of uniaxial strain in wurtzite(Ga,Mn)As nanowires(NWs) grown along the [0001] direction were investigated based on density functional theory(DFT). We found that(Ga,Mn)As NWs are half-metal, and the ferromagnetic state is their stable ground state. The magnetism of the NWs is significantly affected by the strain and by the substituent position of Mn impurities. By examining charge densities near the Fermi level, we found that strain can regulate the conductive region of the NWs. More interestingly, the size of spin-down band gap of the NWs is tunable by adjusting uniaxial stress, and the NWs can be converted from indirect to direct band gap under tension.