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The via interconnects are key components in ultra-large scale integrated circuits(ULSI).This paper deals with a new method to create single-walled carbon nanotubes(SWNTs) via interconnects using alternating dielectrophoresis(DEP).Carbon nanotubes are vertically assembled in the microscale via-holes successfully at room temperature under ambient condition.The electrical evaluation of the SWNT vias reveals that our DEP assembly technique is highly reliable and the success rate of assembly can be as high as 90%.We also propose and test possible approaches to reducing the contact resistance between CNT vias and metal electrodes. 相似文献
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This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes (SWNTs) in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three-dimensional (3D) SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O+ electric double layers around SWNTs in an HF solution. 相似文献
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用纯铁氧化法生长的铁氧化物样品的拉曼光谱研究 总被引:8,自引:0,他引:8
用显微拉曼光谱对纯铁氧化法生长的新铁氧化物材料进行了结构鉴认和成分分析。实验和分析清楚地证明样品的顶层长出了纳米结构的α—Fe2O3,中间层的主要成分是Fe3O4,底层在测量时很可能是与α—Fe2O3相近的成分。 相似文献
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Graphene is a new promising candidate for application in radio-frequency(RF) electronics due to its excellent electronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently,much progress has been made in the graphene-based RF field-effect transistors(RF-FETs). Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum oscillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm,respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits. 相似文献
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